The ablation process induced by femtosecond laser in transparent dielectrics

Xiaoxi Li; Tianqin Jia; Donghai Feng; Zhizhan Xu

doi:10.1117/12.540643

The ablation process induced by femtosecond laser in transparent dielectrics

Xiaoxi Li^*, Tianqin Jia, Donghai Feng, Zhizhan Xu

^*Corresponding author for this work

CAS - Shanghai Institute of Optics and Fine Mechanics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The ablation process in sapphire and fused silica are studied with laser at 800nm and 400nm respectively. Comparing with the features of the ablated craters induced by different laser, we find that lasers with short wavelength and pulse duration can produce more exquisite ablation crater with small area and steep gradient. By means of determining the F_th with detection of the scattered light, the developments of the threshold fluence of dielectrics as a function of pulse duration are presented. While interpreting our results with existent model of optical breakdown, we discuss the excitation mechanism of conduction band electrons (CBE) in transparent dielectrics.

Original language	English
Pages (from-to)	87-91
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5063
DOIs	https://doi.org/10.1117/12.540643
State	Published - 2003
Externally published	Yes
Event	Fourth International Symposium on Laser Precision Microfabrication - Munich, Germany Duration: 21 Jun 2003 → 24 Jun 2003

Keywords

Threshold fluence
Transparent dielectrics
Ultrashort pulse laser ablation

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10.1117/12.540643

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title = "The ablation process induced by femtosecond laser in transparent dielectrics",

abstract = "The ablation process in sapphire and fused silica are studied with laser at 800nm and 400nm respectively. Comparing with the features of the ablated craters induced by different laser, we find that lasers with short wavelength and pulse duration can produce more exquisite ablation crater with small area and steep gradient. By means of determining the Fth with detection of the scattered light, the developments of the threshold fluence of dielectrics as a function of pulse duration are presented. While interpreting our results with existent model of optical breakdown, we discuss the excitation mechanism of conduction band electrons (CBE) in transparent dielectrics.",

keywords = "Threshold fluence, Transparent dielectrics, Ultrashort pulse laser ablation",

author = "Xiaoxi Li and Tianqin Jia and Donghai Feng and Zhizhan Xu",

year = "2003",

doi = "10.1117/12.540643",

language = "英语",

volume = "5063",

pages = "87--91",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

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note = "Fourth International Symposium on Laser Precision Microfabrication ; Conference date: 21-06-2003 Through 24-06-2003",

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TY - JOUR

T1 - The ablation process induced by femtosecond laser in transparent dielectrics

AU - Li, Xiaoxi

AU - Jia, Tianqin

AU - Feng, Donghai

AU - Xu, Zhizhan

PY - 2003

Y1 - 2003

N2 - The ablation process in sapphire and fused silica are studied with laser at 800nm and 400nm respectively. Comparing with the features of the ablated craters induced by different laser, we find that lasers with short wavelength and pulse duration can produce more exquisite ablation crater with small area and steep gradient. By means of determining the Fth with detection of the scattered light, the developments of the threshold fluence of dielectrics as a function of pulse duration are presented. While interpreting our results with existent model of optical breakdown, we discuss the excitation mechanism of conduction band electrons (CBE) in transparent dielectrics.

AB - The ablation process in sapphire and fused silica are studied with laser at 800nm and 400nm respectively. Comparing with the features of the ablated craters induced by different laser, we find that lasers with short wavelength and pulse duration can produce more exquisite ablation crater with small area and steep gradient. By means of determining the Fth with detection of the scattered light, the developments of the threshold fluence of dielectrics as a function of pulse duration are presented. While interpreting our results with existent model of optical breakdown, we discuss the excitation mechanism of conduction band electrons (CBE) in transparent dielectrics.

KW - Threshold fluence

KW - Transparent dielectrics

KW - Ultrashort pulse laser ablation

UR - https://www.scopus.com/pages/publications/2342635882

U2 - 10.1117/12.540643

DO - 10.1117/12.540643

M3 - 会议文章

AN - SCOPUS:2342635882

SN - 0277-786X

VL - 5063

SP - 87

EP - 91

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Fourth International Symposium on Laser Precision Microfabrication

Y2 - 21 June 2003 through 24 June 2003

ER -

The ablation process induced by femtosecond laser in transparent dielectrics

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Keywords

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