Terahertz high electron mobility transistor characterization and on-wafer measurement

Dong Xiong; Jing Bai; Yuan Ting Lyu; Ao Zhang; Jian Jun Gao

doi:10.1016/j.mejo.2025.106846

Terahertz high electron mobility transistor characterization and on-wafer measurement

Dong Xiong, Jing Bai, Yuan Ting Lyu, Ao Zhang, Jian Jun Gao

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, the on wafer measurement methods based on the micro strip line structure and coplanar waveguide structure have been developed for terahertz High Electron Mobility Transistor (HEMT). The measurement layout structures have been designed, and the corresponding small signal equivalent circuit models and parameter extraction procedures are given. The experimental results show that the S-parameters agree well between modeled and measured data in the frequency range of 1–110 GHz.

Original language	English
Article number	106846
Journal	Microelectronics Journal
Volume	165
DOIs	https://doi.org/10.1016/j.mejo.2025.106846
State	Published - Nov 2025

Keywords

HEMT
Measurement
Parameter extraction
Small signal model

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10.1016/j.mejo.2025.106846

Cite this

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title = "Terahertz high electron mobility transistor characterization and on-wafer measurement",

abstract = "In this paper, the on wafer measurement methods based on the micro strip line structure and coplanar waveguide structure have been developed for terahertz High Electron Mobility Transistor (HEMT). The measurement layout structures have been designed, and the corresponding small signal equivalent circuit models and parameter extraction procedures are given. The experimental results show that the S-parameters agree well between modeled and measured data in the frequency range of 1–110 GHz.",

keywords = "HEMT, Measurement, Parameter extraction, Small signal model",

author = "Dong Xiong and Jing Bai and Lyu, \{Yuan Ting\} and Ao Zhang and Gao, \{Jian Jun\}",

note = "Publisher Copyright: {\textcopyright} 2025",

year = "2025",

month = nov,

doi = "10.1016/j.mejo.2025.106846",

language = "英语",

volume = "165",

journal = "Microelectronics Journal",

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T1 - Terahertz high electron mobility transistor characterization and on-wafer measurement

AU - Xiong, Dong

AU - Bai, Jing

AU - Lyu, Yuan Ting

AU - Zhang, Ao

AU - Gao, Jian Jun

PY - 2025/11

Y1 - 2025/11

N2 - In this paper, the on wafer measurement methods based on the micro strip line structure and coplanar waveguide structure have been developed for terahertz High Electron Mobility Transistor (HEMT). The measurement layout structures have been designed, and the corresponding small signal equivalent circuit models and parameter extraction procedures are given. The experimental results show that the S-parameters agree well between modeled and measured data in the frequency range of 1–110 GHz.

AB - In this paper, the on wafer measurement methods based on the micro strip line structure and coplanar waveguide structure have been developed for terahertz High Electron Mobility Transistor (HEMT). The measurement layout structures have been designed, and the corresponding small signal equivalent circuit models and parameter extraction procedures are given. The experimental results show that the S-parameters agree well between modeled and measured data in the frequency range of 1–110 GHz.

KW - HEMT

KW - Measurement

KW - Parameter extraction

KW - Small signal model

UR - https://www.scopus.com/pages/publications/105014275086

U2 - 10.1016/j.mejo.2025.106846

DO - 10.1016/j.mejo.2025.106846

M3 - 文章

AN - SCOPUS:105014275086

SN - 0959-8324

VL - 165

JO - Microelectronics Journal

JF - Microelectronics Journal

M1 - 106846

ER -

Terahertz high electron mobility transistor characterization and on-wafer measurement

Abstract

Keywords

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