Terahertz and photoelectron emission from nanoporous gold films on semiconductors

Junyi Nan; Min Li; Ling Zhang; Shuai Yuan; Boqu He; Heping Zeng

doi:10.3390/nano9030419

Terahertz and photoelectron emission from nanoporous gold films on semiconductors

Junyi Nan
, Min Li
, Ling Zhang
, Shuai Yuan
, Boqu He
, Heping Zeng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Efficient terahertz and photoelectron emission were observed from nano-porous gold (NPG) films deposited on an intrinsic gallium arsenide (GaAs) semiconductor substrate stimulated by femtosecond laser with pulse width of 60 fs. Time-domain THz emission and reflection spectroscopy confirmed that the free charges accelerated by irradiated femtosecond laser pulses transferred from the NPG films into the GaAs substrates. Accordingly, charges accumulation was reduced in the NPG films, resulting in a stronger emission of THz pulse than that from NPG films deposited on SiO ₂ substrate. Charges injected into the GaAs substrate enforced an observable decrease of the THz refractive index proportional to the intensity of incident light. In comparison, for NPG deposited on glass substrates, laser induced free charges were accumulated in the NPG films, and femtosecond laser pulses irradiating on the NPG films made no changes of the THz refractive index of the glass substrates.

Original language	English
Article number	419
Journal	Nanomaterials
Volume	9
Issue number	3
DOIs	https://doi.org/10.3390/nano9030419
State	Published - Mar 2019
Externally published	Yes

Keywords

Localized surface plasmons
Nanoporous gold
Optical rectification
Terahertz radiation

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10.3390/nano9030419

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title = "Terahertz and photoelectron emission from nanoporous gold films on semiconductors",

abstract = " Efficient terahertz and photoelectron emission were observed from nano-porous gold (NPG) films deposited on an intrinsic gallium arsenide (GaAs) semiconductor substrate stimulated by femtosecond laser with pulse width of 60 fs. Time-domain THz emission and reflection spectroscopy confirmed that the free charges accelerated by irradiated femtosecond laser pulses transferred from the NPG films into the GaAs substrates. Accordingly, charges accumulation was reduced in the NPG films, resulting in a stronger emission of THz pulse than that from NPG films deposited on SiO 2 substrate. Charges injected into the GaAs substrate enforced an observable decrease of the THz refractive index proportional to the intensity of incident light. In comparison, for NPG deposited on glass substrates, laser induced free charges were accumulated in the NPG films, and femtosecond laser pulses irradiating on the NPG films made no changes of the THz refractive index of the glass substrates.",

keywords = "Localized surface plasmons, Nanoporous gold, Optical rectification, Terahertz radiation",

author = "Junyi Nan and Min Li and Ling Zhang and Shuai Yuan and Boqu He and Heping Zeng",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2019",

month = mar,

doi = "10.3390/nano9030419",

language = "英语",

volume = "9",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "3",

}

TY - JOUR

T1 - Terahertz and photoelectron emission from nanoporous gold films on semiconductors

AU - Nan, Junyi

AU - Li, Min

AU - Zhang, Ling

AU - Yuan, Shuai

AU - He, Boqu

AU - Zeng, Heping

PY - 2019/3

Y1 - 2019/3

N2 - Efficient terahertz and photoelectron emission were observed from nano-porous gold (NPG) films deposited on an intrinsic gallium arsenide (GaAs) semiconductor substrate stimulated by femtosecond laser with pulse width of 60 fs. Time-domain THz emission and reflection spectroscopy confirmed that the free charges accelerated by irradiated femtosecond laser pulses transferred from the NPG films into the GaAs substrates. Accordingly, charges accumulation was reduced in the NPG films, resulting in a stronger emission of THz pulse than that from NPG films deposited on SiO 2 substrate. Charges injected into the GaAs substrate enforced an observable decrease of the THz refractive index proportional to the intensity of incident light. In comparison, for NPG deposited on glass substrates, laser induced free charges were accumulated in the NPG films, and femtosecond laser pulses irradiating on the NPG films made no changes of the THz refractive index of the glass substrates.

AB - Efficient terahertz and photoelectron emission were observed from nano-porous gold (NPG) films deposited on an intrinsic gallium arsenide (GaAs) semiconductor substrate stimulated by femtosecond laser with pulse width of 60 fs. Time-domain THz emission and reflection spectroscopy confirmed that the free charges accelerated by irradiated femtosecond laser pulses transferred from the NPG films into the GaAs substrates. Accordingly, charges accumulation was reduced in the NPG films, resulting in a stronger emission of THz pulse than that from NPG films deposited on SiO 2 substrate. Charges injected into the GaAs substrate enforced an observable decrease of the THz refractive index proportional to the intensity of incident light. In comparison, for NPG deposited on glass substrates, laser induced free charges were accumulated in the NPG films, and femtosecond laser pulses irradiating on the NPG films made no changes of the THz refractive index of the glass substrates.

KW - Localized surface plasmons

KW - Nanoporous gold

KW - Optical rectification

KW - Terahertz radiation

UR - https://www.scopus.com/pages/publications/85064046443

U2 - 10.3390/nano9030419

DO - 10.3390/nano9030419

M3 - 文章

AN - SCOPUS:85064046443

SN - 2079-4991

VL - 9

JO - Nanomaterials

JF - Nanomaterials

IS - 3

M1 - 419

ER -

Terahertz and photoelectron emission from nanoporous gold films on semiconductors

Abstract

Keywords

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