Temperature dependent phonon evolutions and optical properties of highly c-axis oriented CuGaO2 semiconductor films grown by the sol-gel method

M. J. Han; K. Jiang; J. Z. Zhang; Y. W. Li; Z. G. Hu; J. H. Chu

doi:10.1063/1.3641477

Temperature dependent phonon evolutions and optical properties of highly c-axis oriented CuGaO₂ semiconductor films grown by the sol-gel method

M. J. Han, K. Jiang, J. Z. Zhang, Y. W. Li, Z. G. Hu, J. H. Chu

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Transparent conductive CuGaO₂ oxide films were prepared on sapphire substrates by the sol-gel method. The highly c-axis orientation and optical transparency (60-80) in the visible region were obtained. It indicates that the A_1g phonon mode shifts about 20 cm^-1 with the temperature due to the thermal expansion of the lattice and anharmonic phonon coupling. Moreover, temperature-dependent dielectric function has been investigated and three electronic transitions located at about 1.05, 2.67, and 3.99 eV can be uniquely assigned. It was found that the optical band gap of the CuGaO₂ film decreases with the temperature, which mainly originated from the electron-phonon interactions.

Original language	English
Article number	131104
Journal	Applied Physics Letters
Volume	99
Issue number	13
DOIs	https://doi.org/10.1063/1.3641477
State	Published - 26 Sep 2011

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title = "Temperature dependent phonon evolutions and optical properties of highly c-axis oriented CuGaO2 semiconductor films grown by the sol-gel method",

abstract = "Transparent conductive CuGaO2 oxide films were prepared on sapphire substrates by the sol-gel method. The highly c-axis orientation and optical transparency (60-80) in the visible region were obtained. It indicates that the A1g phonon mode shifts about 20 cm-1 with the temperature due to the thermal expansion of the lattice and anharmonic phonon coupling. Moreover, temperature-dependent dielectric function has been investigated and three electronic transitions located at about 1.05, 2.67, and 3.99 eV can be uniquely assigned. It was found that the optical band gap of the CuGaO2 film decreases with the temperature, which mainly originated from the electron-phonon interactions.",

author = "Han, \{M. J.\} and K. Jiang and Zhang, \{J. Z.\} and Li, \{Y. W.\} and Hu, \{Z. G.\} and Chu, \{J. H.\}",

year = "2011",

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doi = "10.1063/1.3641477",

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volume = "99",

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T1 - Temperature dependent phonon evolutions and optical properties of highly c-axis oriented CuGaO2 semiconductor films grown by the sol-gel method

AU - Han, M. J.

AU - Jiang, K.

AU - Zhang, J. Z.

AU - Li, Y. W.

AU - Hu, Z. G.

AU - Chu, J. H.

PY - 2011/9/26

Y1 - 2011/9/26

N2 - Transparent conductive CuGaO2 oxide films were prepared on sapphire substrates by the sol-gel method. The highly c-axis orientation and optical transparency (60-80) in the visible region were obtained. It indicates that the A1g phonon mode shifts about 20 cm-1 with the temperature due to the thermal expansion of the lattice and anharmonic phonon coupling. Moreover, temperature-dependent dielectric function has been investigated and three electronic transitions located at about 1.05, 2.67, and 3.99 eV can be uniquely assigned. It was found that the optical band gap of the CuGaO2 film decreases with the temperature, which mainly originated from the electron-phonon interactions.

AB - Transparent conductive CuGaO2 oxide films were prepared on sapphire substrates by the sol-gel method. The highly c-axis orientation and optical transparency (60-80) in the visible region were obtained. It indicates that the A1g phonon mode shifts about 20 cm-1 with the temperature due to the thermal expansion of the lattice and anharmonic phonon coupling. Moreover, temperature-dependent dielectric function has been investigated and three electronic transitions located at about 1.05, 2.67, and 3.99 eV can be uniquely assigned. It was found that the optical band gap of the CuGaO2 film decreases with the temperature, which mainly originated from the electron-phonon interactions.

UR - https://www.scopus.com/pages/publications/80053541344

U2 - 10.1063/1.3641477

DO - 10.1063/1.3641477

M3 - 文章

AN - SCOPUS:80053541344

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131104

ER -

Temperature dependent phonon evolutions and optical properties of highly c-axis oriented CuGaO₂ semiconductor films grown by the sol-gel method

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