Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1- xMgxO2 semiconductor films

X. R. Li; M. J. Han; P. Chang; Z. G. Hu; Y. W. Li; Z. Q. Zhu; J. H. Chu

doi:10.1063/1.4860994

Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr_1- _xMg_xO₂ semiconductor films

X. R. Li
, M. J. Han
, P. Chang
, Z. G. Hu^*
, Y. W. Li
, Z. Q. Zhu
, J. H. Chu

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Terahertz reflectance spectra and electrical transport of CuCr _1-xMg_xO₂ films have been studied in temperature range of 150-300 K. With increasing temperature, the phonon mode near 15 THz shows a redshift trend, and free carrier absorption below 6 THz becomes more prominent. Moreover, hole effective mass increases linearly from 0.028 to 0.48 m₀ with the temperature and composition. Hall coefficient shows a turning-point at about 220, 206, and 194 K for the composition of x 0.02, 0.06, and 0.10, respectively. The phenomena can be attributed to the transition of carrier transport mechanism from a thermal activation behavior to a variable range-hopping one.

Original language	English
Article number	012103
Journal	Applied Physics Letters
Volume	104
Issue number	1
DOIs	https://doi.org/10.1063/1.4860994
State	Published - 6 Jan 2014

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title = "Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1- xMgxO2 semiconductor films",

abstract = "Terahertz reflectance spectra and electrical transport of CuCr 1-xMgxO2 films have been studied in temperature range of 150-300 K. With increasing temperature, the phonon mode near 15 THz shows a redshift trend, and free carrier absorption below 6 THz becomes more prominent. Moreover, hole effective mass increases linearly from 0.028 to 0.48 m0 with the temperature and composition. Hall coefficient shows a turning-point at about 220, 206, and 194 K for the composition of x 0.02, 0.06, and 0.10, respectively. The phenomena can be attributed to the transition of carrier transport mechanism from a thermal activation behavior to a variable range-hopping one.",

author = "Li, \{X. R.\} and Han, \{M. J.\} and P. Chang and Hu, \{Z. G.\} and Li, \{Y. W.\} and Zhu, \{Z. Q.\} and Chu, \{J. H.\}",

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doi = "10.1063/1.4860994",

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T1 - Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1- xMgxO2 semiconductor films

AU - Li, X. R.

AU - Han, M. J.

AU - Chang, P.

AU - Hu, Z. G.

AU - Li, Y. W.

AU - Zhu, Z. Q.

AU - Chu, J. H.

PY - 2014/1/6

Y1 - 2014/1/6

N2 - Terahertz reflectance spectra and electrical transport of CuCr 1-xMgxO2 films have been studied in temperature range of 150-300 K. With increasing temperature, the phonon mode near 15 THz shows a redshift trend, and free carrier absorption below 6 THz becomes more prominent. Moreover, hole effective mass increases linearly from 0.028 to 0.48 m0 with the temperature and composition. Hall coefficient shows a turning-point at about 220, 206, and 194 K for the composition of x 0.02, 0.06, and 0.10, respectively. The phenomena can be attributed to the transition of carrier transport mechanism from a thermal activation behavior to a variable range-hopping one.

AB - Terahertz reflectance spectra and electrical transport of CuCr 1-xMgxO2 films have been studied in temperature range of 150-300 K. With increasing temperature, the phonon mode near 15 THz shows a redshift trend, and free carrier absorption below 6 THz becomes more prominent. Moreover, hole effective mass increases linearly from 0.028 to 0.48 m0 with the temperature and composition. Hall coefficient shows a turning-point at about 220, 206, and 194 K for the composition of x 0.02, 0.06, and 0.10, respectively. The phenomena can be attributed to the transition of carrier transport mechanism from a thermal activation behavior to a variable range-hopping one.

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U2 - 10.1063/1.4860994

DO - 10.1063/1.4860994

M3 - 文章

AN - SCOPUS:84892166271

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012103

ER -

Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr_1- _xMg_xO₂ semiconductor films

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