Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors

X. J. Meng; J. L. Sun; X. G. Wang; T. Lin; J. H. Ma; S. L. Guo; J. H. Chu

doi:10.1063/1.1522833

Temperature dependence of ferroelectric and dielectric properties of PbZr_0.5Ti_0.5O₃ thin film based capacitors

X. J. Meng^*
, J. L. Sun
, X. G. Wang
, T. Lin
, J. H. Ma
, S. L. Guo
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The temperature dependence of ferroelectric and dielectric properties of PbZr_0.5Ti_0.5O₃ thin film based capacitors was discussed. It was found that both the saturation polarization and remanent polarization increase with decreasing temperature from 300 to ∼ 50 K and decreased as the temperature continued to decrease below 40 K. The analysis showed that the anomalous behavior of the temperature was due to a phase transition in the PbZr_0.5Ti_0.5O₃.

Original language	English
Pages (from-to)	4035-4037
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	21
DOIs	https://doi.org/10.1063/1.1522833
State	Published - 18 Nov 2002
Externally published	Yes

Access to Document

10.1063/1.1522833

Cite this

@article{4274c67abd394fd082c839e91f30f374,

title = "Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors",

abstract = "The temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors was discussed. It was found that both the saturation polarization and remanent polarization increase with decreasing temperature from 300 to ∼ 50 K and decreased as the temperature continued to decrease below 40 K. The analysis showed that the anomalous behavior of the temperature was due to a phase transition in the PbZr0.5Ti0.5O3.",

author = "Meng, \{X. J.\} and Sun, \{J. L.\} and Wang, \{X. G.\} and T. Lin and Ma, \{J. H.\} and Guo, \{S. L.\} and Chu, \{J. H.\}",

year = "2002",

month = nov,

day = "18",

doi = "10.1063/1.1522833",

language = "英语",

volume = "81",

pages = "4035--4037",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors

AU - Meng, X. J.

AU - Sun, J. L.

AU - Wang, X. G.

AU - Lin, T.

AU - Ma, J. H.

AU - Guo, S. L.

AU - Chu, J. H.

PY - 2002/11/18

Y1 - 2002/11/18

N2 - The temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors was discussed. It was found that both the saturation polarization and remanent polarization increase with decreasing temperature from 300 to ∼ 50 K and decreased as the temperature continued to decrease below 40 K. The analysis showed that the anomalous behavior of the temperature was due to a phase transition in the PbZr0.5Ti0.5O3.

AB - The temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors was discussed. It was found that both the saturation polarization and remanent polarization increase with decreasing temperature from 300 to ∼ 50 K and decreased as the temperature continued to decrease below 40 K. The analysis showed that the anomalous behavior of the temperature was due to a phase transition in the PbZr0.5Ti0.5O3.

UR - https://www.scopus.com/pages/publications/0037132305

U2 - 10.1063/1.1522833

DO - 10.1063/1.1522833

M3 - 文章

AN - SCOPUS:0037132305

SN - 0003-6951

VL - 81

SP - 4035

EP - 4037

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Temperature dependence of ferroelectric and dielectric properties of PbZr_0.5Ti_0.5O₃ thin film based capacitors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this