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Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

  • Chun Gang Duan*
  • , Julian P. Velev
  • , R. F. Sabirianov
  • , W. N. Mei
  • , S. S. Jaswal
  • , E. Y. Tsymbal
  • *Corresponding author for this work
  • University of Nebraska-Lincoln
  • East China Normal University
  • University of Nebraska Omaha

Research output: Contribution to journalArticlepeer-review

Abstract

It is predicted that magnetic anisotropy of a thin magnetic film may be affected by the polarization of a ferroelectric material. Using a FeBaTi O3 bilayer as a representative model and performing first-principles calculations, we demonstrate that a reversal of the electric polarization of BaTi O3 produces a sizable change in magnetic anisotropy energy of Fe films. Tailoring the magnetic anisotropy of a nanomagnet by an adjacent ferroelectric material may yield entirely new device concepts, such as electric-field controlled magnetic data storage.

Original languageEnglish
Article number122905
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
StatePublished - 2008
Externally publishedYes

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