Synthesis, structure, optics and electrical properties of Cu2FeSnS4 thin film by sputtering metallic precursor combined with rapid thermal annealing sulfurization process

Xiankuan Meng; Hongmei Deng; Jun He; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1016/j.matlet.2015.03.046

Synthesis, structure, optics and electrical properties of Cu₂FeSnS₄ thin film by sputtering metallic precursor combined with rapid thermal annealing sulfurization process

Xiankuan Meng
, Hongmei Deng
, Jun He
, Lin Sun
, Pingxiong Yang^*
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

Abstract Cu₂FeSnS₄ (CFTS) thin film has been synthesized by rapid thermal annealing sulfurization of radio-frequency magnetron sputtered precursor. X-ray diffraction pattern indicates that all phases belong to CFTS with tetragonal structure. The strain which exists in the film is calculated to be 8.29×10^-3 using the Williamson-Hall method. Raman spectrum and infrared reflectivity present two A₁, two B and three E optical vibration modes. The band gap of CFTS is evaluated to be 1.42 eV by the transmission spectrum. The electrical properties of CFTS with the structure of glass/Mo/CFTS/CdS/i-ZnO/AZO have also been discussed. The open circuit voltage (V_oc) is 110 mV, short circuit density (J_sc) is 2.5 mA cm^-2 and fill factor (FF) is 26.3%. These results are helpful to the preparation and further study of CFTS thin films for the solar cell application.

Original language	English
Article number	18638
Pages (from-to)	61-63
Number of pages	3
Journal	Materials Letters
Volume	151
DOIs	https://doi.org/10.1016/j.matlet.2015.03.046
State	Published - 15 Jul 2015

Keywords

CuFeSnS
Solar cell
Sputtering
Sulfurization

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10.1016/j.matlet.2015.03.046

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@article{3159be4089714a51bd4f4df7cd4f8963,

title = "Synthesis, structure, optics and electrical properties of Cu2FeSnS4 thin film by sputtering metallic precursor combined with rapid thermal annealing sulfurization process",

abstract = "Abstract Cu2FeSnS4 (CFTS) thin film has been synthesized by rapid thermal annealing sulfurization of radio-frequency magnetron sputtered precursor. X-ray diffraction pattern indicates that all phases belong to CFTS with tetragonal structure. The strain which exists in the film is calculated to be 8.29×10-3 using the Williamson-Hall method. Raman spectrum and infrared reflectivity present two A1, two B and three E optical vibration modes. The band gap of CFTS is evaluated to be 1.42 eV by the transmission spectrum. The electrical properties of CFTS with the structure of glass/Mo/CFTS/CdS/i-ZnO/AZO have also been discussed. The open circuit voltage (Voc) is 110 mV, short circuit density (Jsc) is 2.5 mA cm-2 and fill factor (FF) is 26.3\%. These results are helpful to the preparation and further study of CFTS thin films for the solar cell application.",

keywords = "CuFeSnS, Solar cell, Sputtering, Sulfurization",

author = "Xiankuan Meng and Hongmei Deng and Jun He and Lin Sun and Pingxiong Yang and Junhao Chu",

year = "2015",

month = jul,

day = "15",

doi = "10.1016/j.matlet.2015.03.046",

language = "英语",

volume = "151",

pages = "61--63",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Synthesis, structure, optics and electrical properties of Cu2FeSnS4 thin film by sputtering metallic precursor combined with rapid thermal annealing sulfurization process

AU - Meng, Xiankuan

AU - Deng, Hongmei

AU - He, Jun

AU - Sun, Lin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2015/7/15

Y1 - 2015/7/15

N2 - Abstract Cu2FeSnS4 (CFTS) thin film has been synthesized by rapid thermal annealing sulfurization of radio-frequency magnetron sputtered precursor. X-ray diffraction pattern indicates that all phases belong to CFTS with tetragonal structure. The strain which exists in the film is calculated to be 8.29×10-3 using the Williamson-Hall method. Raman spectrum and infrared reflectivity present two A1, two B and three E optical vibration modes. The band gap of CFTS is evaluated to be 1.42 eV by the transmission spectrum. The electrical properties of CFTS with the structure of glass/Mo/CFTS/CdS/i-ZnO/AZO have also been discussed. The open circuit voltage (Voc) is 110 mV, short circuit density (Jsc) is 2.5 mA cm-2 and fill factor (FF) is 26.3%. These results are helpful to the preparation and further study of CFTS thin films for the solar cell application.

AB - Abstract Cu2FeSnS4 (CFTS) thin film has been synthesized by rapid thermal annealing sulfurization of radio-frequency magnetron sputtered precursor. X-ray diffraction pattern indicates that all phases belong to CFTS with tetragonal structure. The strain which exists in the film is calculated to be 8.29×10-3 using the Williamson-Hall method. Raman spectrum and infrared reflectivity present two A1, two B and three E optical vibration modes. The band gap of CFTS is evaluated to be 1.42 eV by the transmission spectrum. The electrical properties of CFTS with the structure of glass/Mo/CFTS/CdS/i-ZnO/AZO have also been discussed. The open circuit voltage (Voc) is 110 mV, short circuit density (Jsc) is 2.5 mA cm-2 and fill factor (FF) is 26.3%. These results are helpful to the preparation and further study of CFTS thin films for the solar cell application.

KW - CuFeSnS

KW - Solar cell

KW - Sputtering

KW - Sulfurization

UR - https://www.scopus.com/pages/publications/84942076964

U2 - 10.1016/j.matlet.2015.03.046

DO - 10.1016/j.matlet.2015.03.046

M3 - 文章

AN - SCOPUS:84942076964

SN - 0167-577X

VL - 151

SP - 61

EP - 63

JO - Materials Letters

JF - Materials Letters

M1 - 18638

ER -

Synthesis, structure, optics and electrical properties of Cu₂FeSnS₄ thin film by sputtering metallic precursor combined with rapid thermal annealing sulfurization process

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Keywords

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