Abstract
Graphene oxide/TiO2 composites were prepared by using TiCl 3 and graphene oxide as reactants. The concentration of graphene oxide in starting solution played an important role in photoelectronic and photocatalytic performance of graphene oxide/TiO2 composites. Either a p-type or n-type semiconductor was formed by graphene oxide in graphene oxide/TiO2 composites. These semiconductors could be excited by visible light with wavelengths longer than 510 nm and acted as sensitizer in graphene oxide/TiO2 composites. Visible-light driven photocatalytic performance of graphene oxide/TiO2 composites in degradation of methyl orange was also studied. Crystalline quality and chemical states of carbon elements from graphene oxide in graphene oxide/TiO2 composites depended on the concentration of graphene oxide in the starting solution. This study shows a possible way to fabricate graphene oxide/semiconductor composites with different properties by using a tunable semiconductor conductivity type of graphene oxide.
| Original language | English |
|---|---|
| Pages (from-to) | 6425-6432 |
| Number of pages | 8 |
| Journal | ACS Nano |
| Volume | 4 |
| Issue number | 11 |
| DOIs | |
| State | Published - 23 Nov 2010 |
| Externally published | Yes |
Keywords
- Graphene oxide
- P/n heterojunction
- Photocatalysis
- Titanium dioxide
- Visible light