Abstract
Cu2MnSnS4 (CMTS) thin film was the first time to deposit on the seeded fluorine doped tin oxide (FTO) substrate via sulfurization of electrodeposited Cu-Sn/Mn metal precursors. X-ray diffraction patterns and Raman measurements reveal the formation of stannite structure CMTS film with pure phase. The morphological and chemical composition studies indicate the formation of compact and homogenous CMTS thin film with Cu-poor and Mn-rich composition. The band gap of CMTS thin film is evaluated to be about 1.35 eV by the transmission spectrum. The results offer a novel research direction for preparing pure-sulfide CMTS thin films by using a simple, facile, green and low-cost electrodeposition method.
| Original language | English |
|---|---|
| Pages (from-to) | 186-188 |
| Number of pages | 3 |
| Journal | Materials Letters |
| Volume | 191 |
| DOIs | |
| State | Published - 15 Mar 2017 |
Keywords
- CuMnSnS
- Electrodeposition
- FTO
- Semiconductors
- Thin films