TY - JOUR
T1 - Synthesis and characterization of Cu 2 CoSnS 4 thin films prepared via radio-frequency (RF) magnetron sputtering
AU - Wang, Ting
AU - Zhan, Qingfeng
AU - Cheng, Wenjuan
N1 - Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2019/2/15
Y1 - 2019/2/15
N2 - Cu 2 CoSnS 4 (CCTS) thin films, for the first time, were successfully fabricated by RF magnetron sputtering with two different metal precursor stacking sequences followed by sulfurization treatment under kinds of temperatures. Structure, morphology, composition, chemical valence states and optical properties of the as-grown films were discussed by X-ray diffraction (XRD), Raman spectroscopy (Raman), Scanning electron microscopy (SEM), Energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and ultraviolet–visible-near-infrared spectrophotometer (UV–vis–NIR spectrophotometer) respectively. XRD and Raman analysis indicated that the as-obtained Cu 2 CoSnS 4 thin films possess a stannite structure and the crystallinity was improved accompanying the incremental sulfurization temperature under both two depositing orders. The growth mechanism of CCTS films during vulcanization process was also discussed. XRD, Raman spectroscopy and SEM analysis showed that the precursors deposited in Cu/Co/Sn sequence had the best crystallinity after 600 °C sulfurization annealing. Under this preparation condition, XPS analysis showed that the chemical states of the four main elements in the film were Cu (I), Co (II), Sn (IV) and sulfide ions,and it exhibited the direct band gap of 1.58 eV by UV–vis–NIR absorption spectra, which is close to the ideal values for photovoltaic utilization.
AB - Cu 2 CoSnS 4 (CCTS) thin films, for the first time, were successfully fabricated by RF magnetron sputtering with two different metal precursor stacking sequences followed by sulfurization treatment under kinds of temperatures. Structure, morphology, composition, chemical valence states and optical properties of the as-grown films were discussed by X-ray diffraction (XRD), Raman spectroscopy (Raman), Scanning electron microscopy (SEM), Energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and ultraviolet–visible-near-infrared spectrophotometer (UV–vis–NIR spectrophotometer) respectively. XRD and Raman analysis indicated that the as-obtained Cu 2 CoSnS 4 thin films possess a stannite structure and the crystallinity was improved accompanying the incremental sulfurization temperature under both two depositing orders. The growth mechanism of CCTS films during vulcanization process was also discussed. XRD, Raman spectroscopy and SEM analysis showed that the precursors deposited in Cu/Co/Sn sequence had the best crystallinity after 600 °C sulfurization annealing. Under this preparation condition, XPS analysis showed that the chemical states of the four main elements in the film were Cu (I), Co (II), Sn (IV) and sulfide ions,and it exhibited the direct band gap of 1.58 eV by UV–vis–NIR absorption spectra, which is close to the ideal values for photovoltaic utilization.
UR - https://www.scopus.com/pages/publications/85058452846
U2 - 10.1007/s10854-018-0499-6
DO - 10.1007/s10854-018-0499-6
M3 - 文章
AN - SCOPUS:85058452846
SN - 0957-4522
VL - 30
SP - 2285
EP - 2291
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 3
ER -
