Synthesis and characterization of Bi2Cu0.1V0.9O5.35-δ solid electrolyte via chemical solution process

Ming Guo; Xiang Jian Meng; Ping Xiong Yang; Jun Hao Chu

doi:10.3724/SP.J.1010.2009.00259

Synthesis and characterization of Bi₂Cu_0.1V_0.9O_5.35-δ solid electrolyte via chemical solution process

Ming Guo^*
, Xiang Jian Meng
, Ping Xiong Yang
, Jun Hao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Bi₂Cu_0.1V_0.9O_5.35-δ (BICUVOX. 10) materials were prepared by chemical solution process, and the phases, surface morphology and electrical properties of the materials were studied. Our results show that the higher-conducting γ-phase of the BICUVOX. 10 thin films is stabilized at room temperature. The BICUVOX. 10 thin films deposited on LaNiO3/Si substrates are preferred (001) orientation and the mean grain size of the films is about 200 nm. The dielectric dispersion of the films may be originated from the short distance diffusion of oxygen vacancies in the low frequency region. The grain boundary dominates the conduction for the BICUVOX. 10 thin films. The activation energy of oxygen ionic conduction in the BICUVOX. 10 thin films is about 0.3 eV. The oxygen ionic conductivity is about 5×10^-2 S·cm^-1.

Original language	English
Pages (from-to)	259-262
Number of pages	4
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	28
Issue number	4
DOIs	https://doi.org/10.3724/SP.J.1010.2009.00259
State	Published - Aug 2009

Keywords

BICUVOX. 10
Electrolyte
Oxygen ionic conduction

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10.3724/SP.J.1010.2009.00259

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title = "Synthesis and characterization of Bi2Cu0.1V0.9O5.35-δ solid electrolyte via chemical solution process",

abstract = "Bi2Cu0.1V0.9O5.35-δ (BICUVOX. 10) materials were prepared by chemical solution process, and the phases, surface morphology and electrical properties of the materials were studied. Our results show that the higher-conducting γ-phase of the BICUVOX. 10 thin films is stabilized at room temperature. The BICUVOX. 10 thin films deposited on LaNiO3/Si substrates are preferred (001) orientation and the mean grain size of the films is about 200 nm. The dielectric dispersion of the films may be originated from the short distance diffusion of oxygen vacancies in the low frequency region. The grain boundary dominates the conduction for the BICUVOX. 10 thin films. The activation energy of oxygen ionic conduction in the BICUVOX. 10 thin films is about 0.3 eV. The oxygen ionic conductivity is about 5×10-2 S·cm-1.",

keywords = "BICUVOX. 10, Electrolyte, Oxygen ionic conduction",

author = "Ming Guo and Meng, \{Xiang Jian\} and Yang, \{Ping Xiong\} and Chu, \{Jun Hao\}",

year = "2009",

month = aug,

doi = "10.3724/SP.J.1010.2009.00259",

language = "英语",

volume = "28",

pages = "259--262",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

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publisher = "Chinese Optical Society",

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TY - JOUR

T1 - Synthesis and characterization of Bi2Cu0.1V0.9O5.35-δ solid electrolyte via chemical solution process

AU - Guo, Ming

AU - Meng, Xiang Jian

AU - Yang, Ping Xiong

AU - Chu, Jun Hao

PY - 2009/8

Y1 - 2009/8

N2 - Bi2Cu0.1V0.9O5.35-δ (BICUVOX. 10) materials were prepared by chemical solution process, and the phases, surface morphology and electrical properties of the materials were studied. Our results show that the higher-conducting γ-phase of the BICUVOX. 10 thin films is stabilized at room temperature. The BICUVOX. 10 thin films deposited on LaNiO3/Si substrates are preferred (001) orientation and the mean grain size of the films is about 200 nm. The dielectric dispersion of the films may be originated from the short distance diffusion of oxygen vacancies in the low frequency region. The grain boundary dominates the conduction for the BICUVOX. 10 thin films. The activation energy of oxygen ionic conduction in the BICUVOX. 10 thin films is about 0.3 eV. The oxygen ionic conductivity is about 5×10-2 S·cm-1.

AB - Bi2Cu0.1V0.9O5.35-δ (BICUVOX. 10) materials were prepared by chemical solution process, and the phases, surface morphology and electrical properties of the materials were studied. Our results show that the higher-conducting γ-phase of the BICUVOX. 10 thin films is stabilized at room temperature. The BICUVOX. 10 thin films deposited on LaNiO3/Si substrates are preferred (001) orientation and the mean grain size of the films is about 200 nm. The dielectric dispersion of the films may be originated from the short distance diffusion of oxygen vacancies in the low frequency region. The grain boundary dominates the conduction for the BICUVOX. 10 thin films. The activation energy of oxygen ionic conduction in the BICUVOX. 10 thin films is about 0.3 eV. The oxygen ionic conductivity is about 5×10-2 S·cm-1.

KW - BICUVOX. 10

KW - Electrolyte

KW - Oxygen ionic conduction

UR - https://www.scopus.com/pages/publications/69249232487

U2 - 10.3724/SP.J.1010.2009.00259

DO - 10.3724/SP.J.1010.2009.00259

M3 - 文章

AN - SCOPUS:69249232487

SN - 1001-9014

VL - 28

SP - 259

EP - 262

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 4

ER -

Synthesis and characterization of Bi₂Cu_0.1V_0.9O_5.35-δ solid electrolyte via chemical solution process

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Keywords

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