Switchable Pt/TiO2-x/Pt schottky diodes

Ni Zhong; Hisashi Shima; Hiro Akinaga

doi:10.1143/JJAP.48.05DF03

Switchable Pt/TiO_2-x/Pt schottky diodes

Ni Zhong^*
, Hisashi Shima
, Hiro Akinaga

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Current-voltage (/-V) characteristics were investigated in Pt/TiO _2-x/Pt devices, and the effect of annealing temperature of preparing TiO_2-x was studied. All the micro-fabricated Pt/TiO_2-x/Pt devices in initial state show a rectifying /-V behavior, which is attributed to the Schottky-like barrier at the TiO_2-x/Pt (top electrode, TE) interface. In the initial state, the forward current was observed under the positive bias. After applying a negative pulse voltage, the forward current under the negative bias was observed, demonstrating a switch of the Pt/ TiO _2-x/Pt diode polarity. The reproducible switch is successfully observed at a pulse voltage of ±6.0/50 ms. However, this switch behavior is absent in the Pt/TiO_2-x/Pt diode after high temperature annealing as well as 400°C. The origin of the rectifying /-V behavior in initial state and the polarity switch is attributed to the redistribution of oxygen vacancy (V_O) due to applying pulse voltage.

Original language	English
Pages (from-to)	05DF031-05DF034
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	48
Issue number	5 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.05DF03
State	Published - May 2009
Externally published	Yes

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@article{d4cdb8660ed9429580a939935a3b6d7e,

title = "Switchable Pt/TiO2-x/Pt schottky diodes",

abstract = "Current-voltage (/-V) characteristics were investigated in Pt/TiO 2-x/Pt devices, and the effect of annealing temperature of preparing TiO2-x was studied. All the micro-fabricated Pt/TiO2-x/Pt devices in initial state show a rectifying /-V behavior, which is attributed to the Schottky-like barrier at the TiO2-x/Pt (top electrode, TE) interface. In the initial state, the forward current was observed under the positive bias. After applying a negative pulse voltage, the forward current under the negative bias was observed, demonstrating a switch of the Pt/ TiO 2-x/Pt diode polarity. The reproducible switch is successfully observed at a pulse voltage of ±6.0/50 ms. However, this switch behavior is absent in the Pt/TiO2-x/Pt diode after high temperature annealing as well as 400°C. The origin of the rectifying /-V behavior in initial state and the polarity switch is attributed to the redistribution of oxygen vacancy (VO) due to applying pulse voltage.",

author = "Ni Zhong and Hisashi Shima and Hiro Akinaga",

year = "2009",

month = may,

doi = "10.1143/JJAP.48.05DF03",

language = "英语",

volume = "48",

pages = "05DF031--05DF034",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "5 PART 2",

}

TY - JOUR

T1 - Switchable Pt/TiO2-x/Pt schottky diodes

AU - Zhong, Ni

AU - Shima, Hisashi

AU - Akinaga, Hiro

PY - 2009/5

Y1 - 2009/5

N2 - Current-voltage (/-V) characteristics were investigated in Pt/TiO 2-x/Pt devices, and the effect of annealing temperature of preparing TiO2-x was studied. All the micro-fabricated Pt/TiO2-x/Pt devices in initial state show a rectifying /-V behavior, which is attributed to the Schottky-like barrier at the TiO2-x/Pt (top electrode, TE) interface. In the initial state, the forward current was observed under the positive bias. After applying a negative pulse voltage, the forward current under the negative bias was observed, demonstrating a switch of the Pt/ TiO 2-x/Pt diode polarity. The reproducible switch is successfully observed at a pulse voltage of ±6.0/50 ms. However, this switch behavior is absent in the Pt/TiO2-x/Pt diode after high temperature annealing as well as 400°C. The origin of the rectifying /-V behavior in initial state and the polarity switch is attributed to the redistribution of oxygen vacancy (VO) due to applying pulse voltage.

AB - Current-voltage (/-V) characteristics were investigated in Pt/TiO 2-x/Pt devices, and the effect of annealing temperature of preparing TiO2-x was studied. All the micro-fabricated Pt/TiO2-x/Pt devices in initial state show a rectifying /-V behavior, which is attributed to the Schottky-like barrier at the TiO2-x/Pt (top electrode, TE) interface. In the initial state, the forward current was observed under the positive bias. After applying a negative pulse voltage, the forward current under the negative bias was observed, demonstrating a switch of the Pt/ TiO 2-x/Pt diode polarity. The reproducible switch is successfully observed at a pulse voltage of ±6.0/50 ms. However, this switch behavior is absent in the Pt/TiO2-x/Pt diode after high temperature annealing as well as 400°C. The origin of the rectifying /-V behavior in initial state and the polarity switch is attributed to the redistribution of oxygen vacancy (VO) due to applying pulse voltage.

UR - https://www.scopus.com/pages/publications/70249104674

U2 - 10.1143/JJAP.48.05DF03

DO - 10.1143/JJAP.48.05DF03

M3 - 文章

AN - SCOPUS:70249104674

SN - 0021-4922

VL - 48

SP - 05DF031-05DF034

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 5 PART 2

ER -

Switchable Pt/TiO_2-x/Pt schottky diodes

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