Superlattice-like GaSb/Sb 2Te 3 films for low-power phase change memory

Yegang Lu; Sannian Song; Zhitang Song; Wanchun Ren; Yulin Xiong; Feng Rao; Liangcai Wu; Yan Cheng; Bo Liu

doi:10.1016/j.scriptamat.2012.01.013

Superlattice-like GaSb/Sb ₂Te ₃ films for low-power phase change memory

Yegang Lu^*
, Sannian Song
, Zhitang Song
, Wanchun Ren
, Yulin Xiong
, Feng Rao
, Liangcai Wu
, Yan Cheng
, Bo Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The crystallization temperature of superlattice-like GaSb/Sb ₂Te ₃ films can be easily changed by the number of interfaces and thickness ratio between GaSb and Sb ₂Te ₃ layers. The reset operation can be completed by an electric pulse as short as 20 ns for the GaSb(4 nm)/Sb ₂Te ₃(6 nm)-based phase-change memory test cell. This test cell exhibited endurance up to 1.4 × 10 ⁴ cycles. The thermal simulation confirmed that the improved performance of superlattice-like GaSb/Sb ₂Te ₃ films originated from the low thermal conductivity and low melting point.

Original language	English
Pages (from-to)	702-705
Number of pages	4
Journal	Scripta Materialia
Volume	66
Issue number	9
DOIs	https://doi.org/10.1016/j.scriptamat.2012.01.013
State	Published - May 2012
Externally published	Yes

Keywords

Electric resistivity
Multilayers
Phase change memory
Simulation

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10.1016/j.scriptamat.2012.01.013

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title = "Superlattice-like GaSb/Sb 2Te 3 films for low-power phase change memory",

abstract = "The crystallization temperature of superlattice-like GaSb/Sb 2Te 3 films can be easily changed by the number of interfaces and thickness ratio between GaSb and Sb 2Te 3 layers. The reset operation can be completed by an electric pulse as short as 20 ns for the GaSb(4 nm)/Sb 2Te 3(6 nm)-based phase-change memory test cell. This test cell exhibited endurance up to 1.4 × 10 4 cycles. The thermal simulation confirmed that the improved performance of superlattice-like GaSb/Sb 2Te 3 films originated from the low thermal conductivity and low melting point.",

keywords = "Electric resistivity, Multilayers, Phase change memory, Simulation",

author = "Yegang Lu and Sannian Song and Zhitang Song and Wanchun Ren and Yulin Xiong and Feng Rao and Liangcai Wu and Yan Cheng and Bo Liu",

year = "2012",

month = may,

doi = "10.1016/j.scriptamat.2012.01.013",

language = "英语",

volume = "66",

pages = "702--705",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

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}

TY - JOUR

T1 - Superlattice-like GaSb/Sb 2Te 3 films for low-power phase change memory

AU - Lu, Yegang

AU - Song, Sannian

AU - Song, Zhitang

AU - Ren, Wanchun

AU - Xiong, Yulin

AU - Rao, Feng

AU - Wu, Liangcai

AU - Cheng, Yan

AU - Liu, Bo

PY - 2012/5

Y1 - 2012/5

N2 - The crystallization temperature of superlattice-like GaSb/Sb 2Te 3 films can be easily changed by the number of interfaces and thickness ratio between GaSb and Sb 2Te 3 layers. The reset operation can be completed by an electric pulse as short as 20 ns for the GaSb(4 nm)/Sb 2Te 3(6 nm)-based phase-change memory test cell. This test cell exhibited endurance up to 1.4 × 10 4 cycles. The thermal simulation confirmed that the improved performance of superlattice-like GaSb/Sb 2Te 3 films originated from the low thermal conductivity and low melting point.

AB - The crystallization temperature of superlattice-like GaSb/Sb 2Te 3 films can be easily changed by the number of interfaces and thickness ratio between GaSb and Sb 2Te 3 layers. The reset operation can be completed by an electric pulse as short as 20 ns for the GaSb(4 nm)/Sb 2Te 3(6 nm)-based phase-change memory test cell. This test cell exhibited endurance up to 1.4 × 10 4 cycles. The thermal simulation confirmed that the improved performance of superlattice-like GaSb/Sb 2Te 3 films originated from the low thermal conductivity and low melting point.

KW - Electric resistivity

KW - Multilayers

KW - Phase change memory

KW - Simulation

UR - https://www.scopus.com/pages/publications/84862788522

U2 - 10.1016/j.scriptamat.2012.01.013

DO - 10.1016/j.scriptamat.2012.01.013

M3 - 文章

AN - SCOPUS:84862788522

SN - 1359-6462

VL - 66

SP - 702

EP - 705

JO - Scripta Materialia

JF - Scripta Materialia

IS - 9

ER -

Superlattice-like GaSb/Sb ₂Te ₃ films for low-power phase change memory

Abstract

Keywords

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