Subnanometre ferroelectricity in strain-engineered gallium oxide

Zhao Guan; Ni Zhong

doi:10.1038/s41928-026-01702-4

Subnanometre ferroelectricity in strain-engineered gallium oxide

Zhao Guan
, Ni Zhong^*

^*Corresponding author for this work

School of Physics and Electronic Science

Key Laboratory of Polar Materials and Devices (Ministry of Education)
East China Normal University
Shanxi University

Research output: Contribution to journal › Comment/debate

Abstract

A layer of gallium oxide that is only a half-unit-cell thick can be converted via strain engineering into a zincblende phase with switchable ferroelectricity and a coercive voltage below 1 V.

Original language	English
Pages (from-to)	982-983
Number of pages	2
Journal	Nature Electronics
Volume	9
Issue number	9
DOIs	https://doi.org/10.1038/s41928-026-01702-4
State	Published - Sep 2026

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title = "Subnanometre ferroelectricity in strain-engineered gallium oxide",

abstract = "A layer of gallium oxide that is only a half-unit-cell thick can be converted via strain engineering into a zincblende phase with switchable ferroelectricity and a coercive voltage below 1 V.",

author = "Zhao Guan and Ni Zhong",

note = "Publisher Copyright: {\textcopyright} Springer Nature Limited 2026.",

year = "2026",

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doi = "10.1038/s41928-026-01702-4",

language = "英语",

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AU - Guan, Zhao

AU - Zhong, Ni

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Y1 - 2026/9

N2 - A layer of gallium oxide that is only a half-unit-cell thick can be converted via strain engineering into a zincblende phase with switchable ferroelectricity and a coercive voltage below 1 V.

AB - A layer of gallium oxide that is only a half-unit-cell thick can be converted via strain engineering into a zincblende phase with switchable ferroelectricity and a coercive voltage below 1 V.

UR - https://www.scopus.com/pages/publications/105049488217

U2 - 10.1038/s41928-026-01702-4

DO - 10.1038/s41928-026-01702-4

M3 - 评论/辩论

AN - SCOPUS:105049488217

SN - 2520-1131

VL - 9

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EP - 983

JO - Nature Electronics

JF - Nature Electronics

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Subnanometre ferroelectricity in strain-engineered gallium oxide

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