Subband structure of p-type HgCdTe

Subband structure of p-type HgCdTe bulk material was prepared and its capacitance voltage characteristic was measured by using a differential capacitance spectrometer. On the basis of Chu's experimental model, the experimental data were fitted and the subband structure parameters in the inversion layer were obtained, which include the Fermi level, electron energy at the ground state, electron effective mass at the ground state and Fermi level, depletion layer thickness and inversion layer thickness, and their relations with the electron surface concentration in the inversion layer. The experimental result is in good agreement with that calculated from the revised self-consistent theory.