Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thicknesses

C. P. Jiang; S. L. Guo; Z. M. Huang; J. Yu; Y. S. Gui; G. Z. Zheng; J. H. Chu; Z. W. Zheng; B. Shen; Y. D. Zheng

doi:10.1063/1.1386620

Subband electron properties of modulation-doped Al_xGa_1-xN/GaN heterostructures with different barrier thicknesses

C. P. Jiang^*
, S. L. Guo
, Z. M. Huang
, J. Yu
, Y. S. Gui
, G. Z. Zheng
, J. H. Chu
, Z. W. Zheng
, B. Shen
, Y. D. Zheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Magnetotransport properties of modulation-doped heterostructures with different barrier thickness were analyzed in magnetic fields. The elastic strain relaxation of the barrier on subband electron densities and mobilities in the heterostructures was also analyzed using fast fourier transform (FFT). The densities and mobilities of individual subbands were derived by analyzing Shubnikov-de Hass measurements (SdH) oscillations. The results revealed that elastic strain relaxation has strong effects on mobilities of the excited states.

Original language	English
Pages (from-to)	374-376
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	3
DOIs	https://doi.org/10.1063/1.1386620
State	Published - 16 Jul 2001
Externally published	Yes

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10.1063/1.1386620

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@article{c7c9ac719e6a453e91d76c596a9759db,

title = "Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thicknesses",

abstract = "Magnetotransport properties of modulation-doped heterostructures with different barrier thickness were analyzed in magnetic fields. The elastic strain relaxation of the barrier on subband electron densities and mobilities in the heterostructures was also analyzed using fast fourier transform (FFT). The densities and mobilities of individual subbands were derived by analyzing Shubnikov-de Hass measurements (SdH) oscillations. The results revealed that elastic strain relaxation has strong effects on mobilities of the excited states.",

author = "Jiang, \{C. P.\} and Guo, \{S. L.\} and Huang, \{Z. M.\} and J. Yu and Gui, \{Y. S.\} and Zheng, \{G. Z.\} and Chu, \{J. H.\} and Zheng, \{Z. W.\} and B. Shen and Zheng, \{Y. D.\}",

year = "2001",

month = jul,

day = "16",

doi = "10.1063/1.1386620",

language = "英语",

volume = "79",

pages = "374--376",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thicknesses

AU - Jiang, C. P.

AU - Guo, S. L.

AU - Huang, Z. M.

AU - Yu, J.

AU - Gui, Y. S.

AU - Zheng, G. Z.

AU - Chu, J. H.

AU - Zheng, Z. W.

AU - Shen, B.

AU - Zheng, Y. D.

PY - 2001/7/16

Y1 - 2001/7/16

N2 - Magnetotransport properties of modulation-doped heterostructures with different barrier thickness were analyzed in magnetic fields. The elastic strain relaxation of the barrier on subband electron densities and mobilities in the heterostructures was also analyzed using fast fourier transform (FFT). The densities and mobilities of individual subbands were derived by analyzing Shubnikov-de Hass measurements (SdH) oscillations. The results revealed that elastic strain relaxation has strong effects on mobilities of the excited states.

AB - Magnetotransport properties of modulation-doped heterostructures with different barrier thickness were analyzed in magnetic fields. The elastic strain relaxation of the barrier on subband electron densities and mobilities in the heterostructures was also analyzed using fast fourier transform (FFT). The densities and mobilities of individual subbands were derived by analyzing Shubnikov-de Hass measurements (SdH) oscillations. The results revealed that elastic strain relaxation has strong effects on mobilities of the excited states.

UR - https://www.scopus.com/pages/publications/0035898411

U2 - 10.1063/1.1386620

DO - 10.1063/1.1386620

M3 - 文章

AN - SCOPUS:0035898411

SN - 0003-6951

VL - 79

SP - 374

EP - 376

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Subband electron properties of modulation-doped Al_xGa_1-xN/GaN heterostructures with different barrier thicknesses

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