Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

C. P. Jiang; Z. M. Huang; S. L. Guo; J. H. Chu; L. J. Cui; Y. P. Zeng; Z. P. Zhu; B. Q. Wang

doi:10.1063/1.1396625

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

C. P. Jiang^*
, Z. M. Huang
, S. L. Guo
, J. H. Chu
, L. J. Cui
, Y. P. Zeng
, Z. P. Zhu
, B. Q. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A Shubnikov-de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/ InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i = 1). Very close mobilities of 5859 and 5827cm²/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95 × 10¹² cm^-2 due to incomplete transfer of the electrons from the Si δ-doped layer to the well.

Original language	English
Pages (from-to)	1909-1911
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	12
DOIs	https://doi.org/10.1063/1.1396625
State	Published - 17 Sep 2001
Externally published	Yes

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@article{a60fe8fb44b14f9997e491dcd7f95ba6,

title = "Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates",

abstract = "A Shubnikov-de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/ InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i = 1). Very close mobilities of 5859 and 5827cm2/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95 × 1012 cm-2 due to incomplete transfer of the electrons from the Si δ-doped layer to the well.",

author = "Jiang, \{C. P.\} and Huang, \{Z. M.\} and Guo, \{S. L.\} and Chu, \{J. H.\} and Cui, \{L. J.\} and Zeng, \{Y. P.\} and Zhu, \{Z. P.\} and Wang, \{B. Q.\}",

year = "2001",

month = sep,

day = "17",

doi = "10.1063/1.1396625",

language = "英语",

volume = "79",

pages = "1909--1911",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

AU - Jiang, C. P.

AU - Huang, Z. M.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Cui, L. J.

AU - Zeng, Y. P.

AU - Zhu, Z. P.

AU - Wang, B. Q.

PY - 2001/9/17

Y1 - 2001/9/17

N2 - A Shubnikov-de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/ InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i = 1). Very close mobilities of 5859 and 5827cm2/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95 × 1012 cm-2 due to incomplete transfer of the electrons from the Si δ-doped layer to the well.

AB - A Shubnikov-de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/ InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i = 1). Very close mobilities of 5859 and 5827cm2/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95 × 1012 cm-2 due to incomplete transfer of the electrons from the Si δ-doped layer to the well.

UR - https://www.scopus.com/pages/publications/0040333718

U2 - 10.1063/1.1396625

DO - 10.1063/1.1396625

M3 - 文章

AN - SCOPUS:0040333718

SN - 0003-6951

VL - 79

SP - 1909

EP - 1911

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

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