Study on transport properties of two-dimensional electron gases in n-Hg0.80Mg0.20Te interface accumulation layer

Chun Ping Jiang; Yong Sheng Gui; Guo Zhen Zheng; Zhi Xun Ma; Biao Li; Shao Ling Guo; Jun Hao Chu

Study on transport properties of two-dimensional electron gases in n-Hg_0.80Mg_0.20Te interface accumulation layer

Chun Ping Jiang^*, Yong Sheng Gui, Guo Zhen Zheng, Zhi Xun Ma, Biao Li, Shao Ling Guo, Jun Hao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The transport properties in Hg_0.80Mg_0.20Te molecular beam epitaxy film has been studied in the temperature range from 1.5 to 250 K by variable magnetic-field Hall measurement. The experimental data have been analyzed using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both Shubnikov de Hass(SdH) Measurements and the hybrid approach show two-and three-dimensional electronic behaviors. Experimental results indicate that the two-dimensional electrons are due to an accumulation layer near the Hg_1-xMg_xTe-CdTe interface or the Hg_1-xMg_xTe-vacuum interface. Ionized impurity scattering of the three-dimension electron mobility dominates at low temperature (considering the screening effect) while lattice scattering dominates above 100 K. The scattering mechanism in Hg_1-xMg_xTe is very similar to that in Hg_1-xCd_xTe.

Original language	English
Pages (from-to)	1808
Number of pages	1
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	49
Issue number	9
State	Published - Sep 2000
Externally published	Yes

Keywords

Variable magnetic-field Hall measurement accumulation layer two-dimensional electronic gas HgMgTe

Cite this

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title = "Study on transport properties of two-dimensional electron gases in n-Hg0.80Mg0.20Te interface accumulation layer",

abstract = "The transport properties in Hg0.80Mg0.20Te molecular beam epitaxy film has been studied in the temperature range from 1.5 to 250 K by variable magnetic-field Hall measurement. The experimental data have been analyzed using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both Shubnikov de Hass(SdH) Measurements and the hybrid approach show two-and three-dimensional electronic behaviors. Experimental results indicate that the two-dimensional electrons are due to an accumulation layer near the Hg1-xMgxTe-CdTe interface or the Hg1-xMgxTe-vacuum interface. Ionized impurity scattering of the three-dimension electron mobility dominates at low temperature (considering the screening effect) while lattice scattering dominates above 100 K. The scattering mechanism in Hg1-xMgxTe is very similar to that in Hg1-xCdxTe.",

keywords = "Variable magnetic-field Hall measurement accumulation layer two-dimensional electronic gas HgMgTe",

author = "Jiang, \{Chun Ping\} and Gui, \{Yong Sheng\} and Zheng, \{Guo Zhen\} and Ma, \{Zhi Xun\} and Biao Li and Guo, \{Shao Ling\} and Chu, \{Jun Hao\}",

year = "2000",

month = sep,

language = "英语",

volume = "49",

pages = "1808",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Institute of Physics, Chinese Academy of Sciences",

number = "9",

}

TY - JOUR

T1 - Study on transport properties of two-dimensional electron gases in n-Hg0.80Mg0.20Te interface accumulation layer

AU - Jiang, Chun Ping

AU - Gui, Yong Sheng

AU - Zheng, Guo Zhen

AU - Ma, Zhi Xun

AU - Li, Biao

AU - Guo, Shao Ling

AU - Chu, Jun Hao

PY - 2000/9

Y1 - 2000/9

N2 - The transport properties in Hg0.80Mg0.20Te molecular beam epitaxy film has been studied in the temperature range from 1.5 to 250 K by variable magnetic-field Hall measurement. The experimental data have been analyzed using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both Shubnikov de Hass(SdH) Measurements and the hybrid approach show two-and three-dimensional electronic behaviors. Experimental results indicate that the two-dimensional electrons are due to an accumulation layer near the Hg1-xMgxTe-CdTe interface or the Hg1-xMgxTe-vacuum interface. Ionized impurity scattering of the three-dimension electron mobility dominates at low temperature (considering the screening effect) while lattice scattering dominates above 100 K. The scattering mechanism in Hg1-xMgxTe is very similar to that in Hg1-xCdxTe.

AB - The transport properties in Hg0.80Mg0.20Te molecular beam epitaxy film has been studied in the temperature range from 1.5 to 250 K by variable magnetic-field Hall measurement. The experimental data have been analyzed using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both Shubnikov de Hass(SdH) Measurements and the hybrid approach show two-and three-dimensional electronic behaviors. Experimental results indicate that the two-dimensional electrons are due to an accumulation layer near the Hg1-xMgxTe-CdTe interface or the Hg1-xMgxTe-vacuum interface. Ionized impurity scattering of the three-dimension electron mobility dominates at low temperature (considering the screening effect) while lattice scattering dominates above 100 K. The scattering mechanism in Hg1-xMgxTe is very similar to that in Hg1-xCdxTe.

KW - Variable magnetic-field Hall measurement accumulation layer two-dimensional electronic gas HgMgTe

UR - https://www.scopus.com/pages/publications/0043225773

M3 - 文章

AN - SCOPUS:0043225773

SN - 1000-3290

VL - 49

SP - 1808

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 9

ER -

Study on transport properties of two-dimensional electron gases in n-Hg_0.80Mg_0.20Te interface accumulation layer

Abstract

Keywords

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