Study on the structure and ferroelectric properties of sol-gel derived Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films

Aiyun Liu; Xiangjian Meng; Jinglan Sun; Junhao Chu

doi:10.1117/12.607553

Study on the structure and ferroelectric properties of sol-gel derived Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films

Aiyun Liu, Xiangjian Meng, Jinglan Sun, Junhao Chu

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

92%Pb(Mg_1/3Nb_2/3)O₃-8%PbTiO₃ (PMNT) thin films on Pt/TiO₂/SiO₂/Si substrates with and without a LaNiO₃ (LNO) buffered layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with some amounts of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffered layer. Electrical properties of the PMNT thin films are highly improved by using the buffered layer LNO. It is found that the remanent polarization (P_r) and the dielectric constant for the PMNT film with a LNO buffered layer are larger than that for the film without a LNO buffered layer.

Original language	English
Article number	35
Pages (from-to)	160-163
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.607553
State	Published - 2005
Externally published	Yes
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Keywords

Buffered layer
PMNT thin film
Pyrochlore phase

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10.1117/12.607553

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title = "Study on the structure and ferroelectric properties of sol-gel derived Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films",

abstract = "92\%Pb(Mg1/3Nb2/3)O3-8\%PbTiO3 (PMNT) thin films on Pt/TiO2/SiO2/Si substrates with and without a LaNiO3 (LNO) buffered layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with some amounts of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffered layer. Electrical properties of the PMNT thin films are highly improved by using the buffered layer LNO. It is found that the remanent polarization (Pr) and the dielectric constant for the PMNT film with a LNO buffered layer are larger than that for the film without a LNO buffered layer.",

keywords = "Buffered layer, PMNT thin film, Pyrochlore phase",

author = "Aiyun Liu and Xiangjian Meng and Jinglan Sun and Junhao Chu",

year = "2005",

doi = "10.1117/12.607553",

language = "英语",

volume = "5774",

pages = "160--163",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

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TY - JOUR

T1 - Study on the structure and ferroelectric properties of sol-gel derived Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films

AU - Liu, Aiyun

AU - Meng, Xiangjian

AU - Sun, Jinglan

AU - Chu, Junhao

PY - 2005

Y1 - 2005

N2 - 92%Pb(Mg1/3Nb2/3)O3-8%PbTiO3 (PMNT) thin films on Pt/TiO2/SiO2/Si substrates with and without a LaNiO3 (LNO) buffered layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with some amounts of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffered layer. Electrical properties of the PMNT thin films are highly improved by using the buffered layer LNO. It is found that the remanent polarization (Pr) and the dielectric constant for the PMNT film with a LNO buffered layer are larger than that for the film without a LNO buffered layer.

AB - 92%Pb(Mg1/3Nb2/3)O3-8%PbTiO3 (PMNT) thin films on Pt/TiO2/SiO2/Si substrates with and without a LaNiO3 (LNO) buffered layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with some amounts of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffered layer. Electrical properties of the PMNT thin films are highly improved by using the buffered layer LNO. It is found that the remanent polarization (Pr) and the dielectric constant for the PMNT film with a LNO buffered layer are larger than that for the film without a LNO buffered layer.

KW - Buffered layer

KW - PMNT thin film

KW - Pyrochlore phase

UR - https://www.scopus.com/pages/publications/25644453664

U2 - 10.1117/12.607553

DO - 10.1117/12.607553

M3 - 会议文章

AN - SCOPUS:25644453664

SN - 0277-786X

VL - 5774

SP - 160

EP - 163

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 35

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Study on the structure and ferroelectric properties of sol-gel derived Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films

Abstract

Keywords

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