Abstract
Micro-Raman analysis was used to identify the oxidation of a silicon microchannel plate (SiMCP) and it indicated that the bend phenomenon of the SiMCP was related to the release of stress and the volume expending of the silicon wall during the oxidation process.
| Original language | English |
|---|---|
| Article number | 055010 |
| Journal | Semiconductor Science and Technology |
| Volume | 31 |
| Issue number | 5 |
| DOIs | |
| State | Published - 29 Mar 2016 |
Keywords
- micro-Raman
- oxidation
- silicon microchannel plates
- stain
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