Study on the strain in a silicon microchannel plate by micro-Raman analysis

Shaohui Xu; Jiabing Fang; Dajun Wu; Chi Zhang; Yiping Zhu; Dayuan Xiong; Lianwei Wang; Pingxiong Yang; Paul K. Chu

doi:10.1088/0268-1242/31/5/055010

Study on the strain in a silicon microchannel plate by micro-Raman analysis

Shaohui Xu, Jiabing Fang, Dajun Wu, Chi Zhang, Yiping Zhu, Dayuan Xiong, Lianwei Wang, Pingxiong Yang, Paul K. Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

Micro-Raman analysis was used to identify the oxidation of a silicon microchannel plate (SiMCP) and it indicated that the bend phenomenon of the SiMCP was related to the release of stress and the volume expending of the silicon wall during the oxidation process.

Original language	English
Article number	055010
Journal	Semiconductor Science and Technology
Volume	31
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/31/5/055010
State	Published - 29 Mar 2016

Keywords

micro-Raman
oxidation
silicon microchannel plates
stain

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10.1088/0268-1242/31/5/055010

Cite this

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title = "Study on the strain in a silicon microchannel plate by micro-Raman analysis",

abstract = "Micro-Raman analysis was used to identify the oxidation of a silicon microchannel plate (SiMCP) and it indicated that the bend phenomenon of the SiMCP was related to the release of stress and the volume expending of the silicon wall during the oxidation process.",

keywords = "micro-Raman, oxidation, silicon microchannel plates, stain",

author = "Shaohui Xu and Jiabing Fang and Dajun Wu and Chi Zhang and Yiping Zhu and Dayuan Xiong and Lianwei Wang and Pingxiong Yang and Chu, \{Paul K.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

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day = "29",

doi = "10.1088/0268-1242/31/5/055010",

language = "英语",

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T1 - Study on the strain in a silicon microchannel plate by micro-Raman analysis

AU - Xu, Shaohui

AU - Fang, Jiabing

AU - Wu, Dajun

AU - Zhang, Chi

AU - Zhu, Yiping

AU - Xiong, Dayuan

AU - Wang, Lianwei

AU - Yang, Pingxiong

AU - Chu, Paul K.

PY - 2016/3/29

Y1 - 2016/3/29

N2 - Micro-Raman analysis was used to identify the oxidation of a silicon microchannel plate (SiMCP) and it indicated that the bend phenomenon of the SiMCP was related to the release of stress and the volume expending of the silicon wall during the oxidation process.

AB - Micro-Raman analysis was used to identify the oxidation of a silicon microchannel plate (SiMCP) and it indicated that the bend phenomenon of the SiMCP was related to the release of stress and the volume expending of the silicon wall during the oxidation process.

KW - micro-Raman

KW - oxidation

KW - silicon microchannel plates

KW - stain

UR - https://www.scopus.com/pages/publications/84963795068

U2 - 10.1088/0268-1242/31/5/055010

DO - 10.1088/0268-1242/31/5/055010

M3 - 文章

AN - SCOPUS:84963795068

SN - 0268-1242

VL - 31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

M1 - 055010

ER -

Study on the strain in a silicon microchannel plate by micro-Raman analysis

Abstract

Keywords

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