Study on the preparation of LaNiO3 thin films using chemical solution decomposition method

Ya Wei Li; Xiang Jian Meng; Jian Yu; Gen Shui Wang; Jing Lan Sun; Jun Hao Chu; Wei Feng Zhang

Study on the preparation of LaNiO₃ thin films using chemical solution decomposition method

Ya Wei Li^*, Xiang Jian Meng, Jian Yu, Gen Shui Wang, Jing Lan Sun, Jun Hao Chu, Wei Feng Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

LaNiO₃ thin films on Si (l00) substrates were prepared by chemical solution decomposition. The effects of annealing atmosphere (air and oxygen) on the crystallinity, grain size and resistivity of thin films, and the PZT films grown on the LNO layers were studied. The results show that the value of resistivity of the thin films annealed in oxygen is only half of that obtained in air. The conductive mechanism of the thin films was discussed.

Original language	English
Pages (from-to)	269-272
Number of pages	4
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	22
Issue number	4
State	Published - Aug 2003
Externally published	Yes

Keywords

Annealing atmosphere
Chemical solution decomposition
LaNiO thin films
Resistivity

Cite this

@article{166b966d14d94a1daf61e47421432c38,

title = "Study on the preparation of LaNiO3 thin films using chemical solution decomposition method",

abstract = "LaNiO3 thin films on Si (l00) substrates were prepared by chemical solution decomposition. The effects of annealing atmosphere (air and oxygen) on the crystallinity, grain size and resistivity of thin films, and the PZT films grown on the LNO layers were studied. The results show that the value of resistivity of the thin films annealed in oxygen is only half of that obtained in air. The conductive mechanism of the thin films was discussed.",

keywords = "Annealing atmosphere, Chemical solution decomposition, LaNiO thin films, Resistivity",

author = "Li, \{Ya Wei\} and Meng, \{Xiang Jian\} and Jian Yu and Wang, \{Gen Shui\} and Sun, \{Jing Lan\} and Chu, \{Jun Hao\} and Zhang, \{Wei Feng\}",

year = "2003",

month = aug,

language = "英语",

volume = "22",

pages = "269--272",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "4",

}

TY - JOUR

T1 - Study on the preparation of LaNiO3 thin films using chemical solution decomposition method

AU - Li, Ya Wei

AU - Meng, Xiang Jian

AU - Yu, Jian

AU - Wang, Gen Shui

AU - Sun, Jing Lan

AU - Chu, Jun Hao

AU - Zhang, Wei Feng

PY - 2003/8

Y1 - 2003/8

N2 - LaNiO3 thin films on Si (l00) substrates were prepared by chemical solution decomposition. The effects of annealing atmosphere (air and oxygen) on the crystallinity, grain size and resistivity of thin films, and the PZT films grown on the LNO layers were studied. The results show that the value of resistivity of the thin films annealed in oxygen is only half of that obtained in air. The conductive mechanism of the thin films was discussed.

AB - LaNiO3 thin films on Si (l00) substrates were prepared by chemical solution decomposition. The effects of annealing atmosphere (air and oxygen) on the crystallinity, grain size and resistivity of thin films, and the PZT films grown on the LNO layers were studied. The results show that the value of resistivity of the thin films annealed in oxygen is only half of that obtained in air. The conductive mechanism of the thin films was discussed.

KW - Annealing atmosphere

KW - Chemical solution decomposition

KW - LaNiO thin films

KW - Resistivity

UR - https://www.scopus.com/pages/publications/1242275338

M3 - 文章

AN - SCOPUS:1242275338

SN - 1001-9014

VL - 22

SP - 269

EP - 272

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 4

ER -

Study on the preparation of LaNiO₃ thin films using chemical solution decomposition method

Abstract

Keywords

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