Abstract
Low energy ion beam assisted deposition (IBAD) was employed to prepare Ag films on Mo/Si (100) substrate. It was found that Ag films deposited by sputtering method without ion beam bombardment were preferred (111) orientation. When the depositing film was simultaneously bombardment by Ar + beam perpendicular to the film surface at ion/atom arrival ratio of 0.18, the prepared films exhibited weak (111) and (200) mixed orientations. When the direction of Ar + beam was off-normal direction of the film surface, Ag films showed highly preferred (111) orientation. Monte Carlo method was used to calculate the sputtering yields of Ar + ions at various incident and azimuth angles. The effects of channeling and surface free energy on the crystallographic orientation of Ag films were discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1565-1568 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 254 |
| Issue number | 6 |
| DOIs | |
| State | Published - 15 Jan 2008 |
| Externally published | Yes |
Keywords
- Ag film
- Ion beam assisted deposition
- Preferred orientation