Study on the magneto-capacitance spectroscopy of InSb MIS structure

Liangjin Wu; Kun Liu; Junhao Chu

Study on the magneto-capacitance spectroscopy of InSb MIS structure

Liangjin Wu^*
, Kun Liu
, Junhao Chu

^*Corresponding author for this work

Fuzhou University

Research output: Contribution to journal › Article › peer-review

Abstract

By measuring the magneto-capacitance spectroscopy of an n-type InSb metal-insulator-semiconductor (MIS) structure, the 2-D hole subband in the p-type channel of the InSb MIS device was investigated under different magnetic fields at 1.2K. The results show that the on set energy of the p-type channel depends strongly on the magnetic field, which is mainly attributed to the dependence of the InSb band gap energy on the magnetic field.

Original language	English
Pages (from-to)	7-10
Number of pages	4
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	16
Issue number	1
State	Published - Feb 1997
Externally published	Yes

Cite this

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title = "Study on the magneto-capacitance spectroscopy of InSb MIS structure",

abstract = "By measuring the magneto-capacitance spectroscopy of an n-type InSb metal-insulator-semiconductor (MIS) structure, the 2-D hole subband in the p-type channel of the InSb MIS device was investigated under different magnetic fields at 1.2K. The results show that the on set energy of the p-type channel depends strongly on the magnetic field, which is mainly attributed to the dependence of the InSb band gap energy on the magnetic field.",

author = "Liangjin Wu and Kun Liu and Junhao Chu",

year = "1997",

month = feb,

language = "英语",

volume = "16",

pages = "7--10",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "1",

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T1 - Study on the magneto-capacitance spectroscopy of InSb MIS structure

AU - Wu, Liangjin

AU - Liu, Kun

AU - Chu, Junhao

PY - 1997/2

Y1 - 1997/2

N2 - By measuring the magneto-capacitance spectroscopy of an n-type InSb metal-insulator-semiconductor (MIS) structure, the 2-D hole subband in the p-type channel of the InSb MIS device was investigated under different magnetic fields at 1.2K. The results show that the on set energy of the p-type channel depends strongly on the magnetic field, which is mainly attributed to the dependence of the InSb band gap energy on the magnetic field.

AB - By measuring the magneto-capacitance spectroscopy of an n-type InSb metal-insulator-semiconductor (MIS) structure, the 2-D hole subband in the p-type channel of the InSb MIS device was investigated under different magnetic fields at 1.2K. The results show that the on set energy of the p-type channel depends strongly on the magnetic field, which is mainly attributed to the dependence of the InSb band gap energy on the magnetic field.

UR - https://www.scopus.com/pages/publications/0031074480

M3 - 文章

AN - SCOPUS:0031074480

SN - 1001-9014

VL - 16

SP - 7

EP - 10

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 1

ER -

Study on the magneto-capacitance spectroscopy of InSb MIS structure

Abstract

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