Abstract
By measuring the magneto-capacitance spectroscopy of an n-type InSb metal-insulator-semiconductor (MIS) structure, the 2-D hole subband in the p-type channel of the InSb MIS device was investigated under different magnetic fields at 1.2K. The results show that the on set energy of the p-type channel depends strongly on the magnetic field, which is mainly attributed to the dependence of the InSb band gap energy on the magnetic field.
| Original language | English |
|---|---|
| Pages (from-to) | 7-10 |
| Number of pages | 4 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 16 |
| Issue number | 1 |
| State | Published - Feb 1997 |
| Externally published | Yes |