Study on the electron mobility for each subband on the n-HgCdTe accumulated layer

Yong Sheng Gui; Jun Hao Chu; Cai Yi; Guo Zhen Zheng; Ding Yuan Tang

Study on the electron mobility for each subband on the n-HgCdTe accumulated layer

Yong Sheng Gui, Jun Hao Chu, Cai Yi, Guo Zhen Zheng, Ding Yuan Tang

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

By using quantitative mobility spectrum analysis technique, the temperature-dependent density and mobility for each subband of the accumulated layer on the n-HgCdTe devices have been determined from magnetic-field-dependent Hall and resistivity data. The results agree well with the Shubnikov-de Hass measurements and theoretical calculations.

Original language	English
Pages (from-to)	1359-1360
Number of pages	2
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	47
Issue number	8
State	Published - 1998

Cite this

@article{46fdb2b82fb94d1db767896f3f77ca46,

title = "Study on the electron mobility for each subband on the n-HgCdTe accumulated layer",

abstract = "By using quantitative mobility spectrum analysis technique, the temperature-dependent density and mobility for each subband of the accumulated layer on the n-HgCdTe devices have been determined from magnetic-field-dependent Hall and resistivity data. The results agree well with the Shubnikov-de Hass measurements and theoretical calculations.",

author = "Gui, \{Yong Sheng\} and Chu, \{Jun Hao\} and Cai Yi and Zheng, \{Guo Zhen\} and Tang, \{Ding Yuan\}",

year = "1998",

language = "英语",

volume = "47",

pages = "1359--1360",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Institute of Physics, Chinese Academy of Sciences",

number = "8",

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TY - JOUR

T1 - Study on the electron mobility for each subband on the n-HgCdTe accumulated layer

AU - Gui, Yong Sheng

AU - Chu, Jun Hao

AU - Yi, Cai

AU - Zheng, Guo Zhen

AU - Tang, Ding Yuan

PY - 1998

Y1 - 1998

N2 - By using quantitative mobility spectrum analysis technique, the temperature-dependent density and mobility for each subband of the accumulated layer on the n-HgCdTe devices have been determined from magnetic-field-dependent Hall and resistivity data. The results agree well with the Shubnikov-de Hass measurements and theoretical calculations.

AB - By using quantitative mobility spectrum analysis technique, the temperature-dependent density and mobility for each subband of the accumulated layer on the n-HgCdTe devices have been determined from magnetic-field-dependent Hall and resistivity data. The results agree well with the Shubnikov-de Hass measurements and theoretical calculations.

UR - https://www.scopus.com/pages/publications/0346243712

M3 - 文章

AN - SCOPUS:0346243712

SN - 1000-3290

VL - 47

SP - 1359

EP - 1360

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 8

ER -

Study on the electron mobility for each subband on the n-HgCdTe accumulated layer

Abstract

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