TY - JOUR
T1 - Study on the electrical and optical properties of Pb(Mg 1/3Nb2/3)O3-PbTiO3 thin films deposited by a chemical solution method
AU - Liu, Aiyun
AU - Meng, Xiangjian
AU - Sun, Jinglan
AU - Xue, Jianqiang
AU - Ma, Jianhua
AU - Wang, Lin
AU - Chu, Junhao
PY - 2006/4/15
Y1 - 2006/4/15
N2 - By a chemical solution deposition method, 92%Pb(Mg1/3Nb 2/3)O3-8%PbTiO3 (PMNT) thin films have been prepared on LaNiO3 (LNO)-coated (1 0 0) silicon and sapphire substrate. X-ray diffraction analysis shows the PMNT thin films on LNO-coated silicon as polycrystals with (1 0 0)-preferential orientation. A Pt/PMNT/LNO capacitor has been fabricated and it showed that the PMNT thin films have obvious ferroelectric character, with saturation polarization (Ps), remanent polarization (Pr) and coercive field (Ec) of 25.5 μC/cm2, 11.9 μC/cm2 and 168 kV/cm, respectively. The dielectric constant (*r) reaches 270 and the dissipation factor is very low at 1 kHz. By the optical transmission spectra measurement, the optical constants (n and k ) and absorption coefficient (α) of the PMNT thin films on sapphire substrate in the wavelength range of 200-1100 nm are all obtained. The energy gap (Eg) of the PMNT thin films on the sapphire substrate was found to be about 4.03 eV.
AB - By a chemical solution deposition method, 92%Pb(Mg1/3Nb 2/3)O3-8%PbTiO3 (PMNT) thin films have been prepared on LaNiO3 (LNO)-coated (1 0 0) silicon and sapphire substrate. X-ray diffraction analysis shows the PMNT thin films on LNO-coated silicon as polycrystals with (1 0 0)-preferential orientation. A Pt/PMNT/LNO capacitor has been fabricated and it showed that the PMNT thin films have obvious ferroelectric character, with saturation polarization (Ps), remanent polarization (Pr) and coercive field (Ec) of 25.5 μC/cm2, 11.9 μC/cm2 and 168 kV/cm, respectively. The dielectric constant (*r) reaches 270 and the dissipation factor is very low at 1 kHz. By the optical transmission spectra measurement, the optical constants (n and k ) and absorption coefficient (α) of the PMNT thin films on sapphire substrate in the wavelength range of 200-1100 nm are all obtained. The energy gap (Eg) of the PMNT thin films on the sapphire substrate was found to be about 4.03 eV.
KW - A1. Electrical and optical properties
KW - A1. Structure
KW - A3. Chemical solution deposition
KW - B1. PMNT thin films
KW - B2. Ferroelectric materials
UR - https://www.scopus.com/pages/publications/33645017385
U2 - 10.1016/j.jcrysgro.2005.12.098
DO - 10.1016/j.jcrysgro.2005.12.098
M3 - 文章
AN - SCOPUS:33645017385
SN - 0022-0248
VL - 290
SP - 127
EP - 130
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -