Study on the composition profile of a Hg1-xCdxTe epitaxy film by infrared transmission spectroscopy

  • Biao Li*
  • , Junhao Chu
  • , Kun Liu
  • , Dingyuan Tang
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Based on our empirical rules for the intrinsic absorption coefficient and refractive index of Hg1-xCdxTe in Hougen's model, a useful method for determining the composition profile of an epitaxy layer from room-temperature infrared transmittance spectroscopy is presented. The compositional depth non-uniformity of Hg1-xCdxTe film samples grown by liquid-phase epitaxy, metal-organic chemical vapour deposition and molecular beam epitaxy techniques is determined using this method and compared with that from secondary ion mass spectroscopy and X-ray microprobic measurements.

Original languageEnglish
Article number004
Pages (from-to)29-35
Number of pages7
JournalJournal of Physics Condensed Matter
Volume7
Issue number1
DOIs
StatePublished - 1995
Externally publishedYes

Fingerprint

Dive into the research topics of 'Study on the composition profile of a Hg1-xCdxTe epitaxy film by infrared transmission spectroscopy'. Together they form a unique fingerprint.

Cite this