Abstract
Based on our empirical rules for the intrinsic absorption coefficient and refractive index of Hg1-xCdxTe in Hougen's model, a useful method for determining the composition profile of an epitaxy layer from room-temperature infrared transmittance spectroscopy is presented. The compositional depth non-uniformity of Hg1-xCdxTe film samples grown by liquid-phase epitaxy, metal-organic chemical vapour deposition and molecular beam epitaxy techniques is determined using this method and compared with that from secondary ion mass spectroscopy and X-ray microprobic measurements.
| Original language | English |
|---|---|
| Article number | 004 |
| Pages (from-to) | 29-35 |
| Number of pages | 7 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 7 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1995 |
| Externally published | Yes |