Study on the As redistribution in β-FeSi2 film prepared by reactive deposition epitaxy

Lianwei Wang; Chenglu Lin; Xiangdong Chen; Shichang Zou; Zuyao Zhou; Xianghuai Liu

Study on the As redistribution in β-FeSi₂ film prepared by reactive deposition epitaxy

Lianwei Wang^*
, Chenglu Lin
, Xiangdong Chen
, Shichang Zou
, Zuyao Zhou
, Xianghuai Liu

^*Corresponding author for this work

Chinese Academy of Sciences

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we report on the As redistribution properties in β-FeSi₂ prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film.

Original language	English
Pages	721-724
Number of pages	4
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA Duration: 16 Jun 1996 → 21 Jun 1996

Conference

Conference	Proceedings of the 1996 11th International Conference on Ion Implantation Technology
City	Austin, TX, USA
Period	16/06/96 → 21/06/96

Cite this

@conference{9b3cadfa27574f9f996a003ecee34787,

title = "Study on the As redistribution in β-FeSi2 film prepared by reactive deposition epitaxy",

abstract = "In this paper, we report on the As redistribution properties in β-FeSi2 prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film.",

author = "Lianwei Wang and Chenglu Lin and Xiangdong Chen and Shichang Zou and Zuyao Zhou and Xianghuai Liu",

year = "1996",

language = "英语",

pages = "721--724",

note = "Proceedings of the 1996 11th International Conference on Ion Implantation Technology ; Conference date: 16-06-1996 Through 21-06-1996",

}

TY - CONF

T1 - Study on the As redistribution in β-FeSi2 film prepared by reactive deposition epitaxy

AU - Wang, Lianwei

AU - Lin, Chenglu

AU - Chen, Xiangdong

AU - Zou, Shichang

AU - Zhou, Zuyao

AU - Liu, Xianghuai

PY - 1996

Y1 - 1996

N2 - In this paper, we report on the As redistribution properties in β-FeSi2 prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film.

AB - In this paper, we report on the As redistribution properties in β-FeSi2 prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film.

UR - https://www.scopus.com/pages/publications/0030372412

M3 - 论文

AN - SCOPUS:0030372412

SP - 721

EP - 724

T2 - Proceedings of the 1996 11th International Conference on Ion Implantation Technology

Y2 - 16 June 1996 through 21 June 1996

ER -

Study on the As redistribution in β-FeSi₂ film prepared by reactive deposition epitaxy

Abstract

Conference

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