Study on GeGaSbTe film for long data retention phase change memory application

Zhonghua Zhang; Sannian Song; Zhitang Song; Yan Cheng; Yifeng Gu; Liangcai Wu; Bo Liu; Songlin Feng

doi:10.1016/j.jnoncrysol.2013.09.017

Study on GeGaSbTe film for long data retention phase change memory application

Zhonghua Zhang, Sannian Song, Zhitang Song, Yan Cheng, Yifeng Gu, Liangcai Wu, Bo Liu, Songlin Feng

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this paper, Ga_0.6Ge_2.8Sb_2.6Te ₄ film was investigated for long data retention phase change memory application. Compared with Ge₂Sb₂Te₅, Ga _0.6Ge_2.8Sb_2.6Te₄ film has higher crystallization temperatures (~ 240 C) and larger crystallization activation energy (~ 2.9 eV), which lead to a higher temperature (~ 135 C) for ten year data retention. The reversible phase change can be realized by a 100-ns width electric pulse. Ga_0.6Ge_2.8Sb_2.6Te₄ based cell shows good endurance up to 1.05 × 10⁵ SET-RESET cycles during endurance test.

Original language	English
Pages (from-to)	54-57
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	381
DOIs	https://doi.org/10.1016/j.jnoncrysol.2013.09.017
State	Published - 2013
Externally published	Yes

Keywords

A. Phase change material
D. Data retention
D. Electrical properties

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10.1016/j.jnoncrysol.2013.09.017

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@article{efe1585244db46c98d2eec2309ad098c,

title = "Study on GeGaSbTe film for long data retention phase change memory application",

abstract = "In this paper, Ga0.6Ge2.8Sb2.6Te 4 film was investigated for long data retention phase change memory application. Compared with Ge2Sb2Te5, Ga 0.6Ge2.8Sb2.6Te4 film has higher crystallization temperatures (\textasciitilde{} 240 C) and larger crystallization activation energy (\textasciitilde{} 2.9 eV), which lead to a higher temperature (\textasciitilde{} 135 C) for ten year data retention. The reversible phase change can be realized by a 100-ns width electric pulse. Ga0.6Ge2.8Sb2.6Te4 based cell shows good endurance up to 1.05 × 105 SET-RESET cycles during endurance test.",

keywords = "A. Phase change material, D. Data retention, D. Electrical properties",

author = "Zhonghua Zhang and Sannian Song and Zhitang Song and Yan Cheng and Yifeng Gu and Liangcai Wu and Bo Liu and Songlin Feng",

year = "2013",

doi = "10.1016/j.jnoncrysol.2013.09.017",

language = "英语",

volume = "381",

pages = "54--57",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Study on GeGaSbTe film for long data retention phase change memory application

AU - Zhang, Zhonghua

AU - Song, Sannian

AU - Song, Zhitang

AU - Cheng, Yan

AU - Gu, Yifeng

AU - Wu, Liangcai

AU - Liu, Bo

AU - Feng, Songlin

PY - 2013

Y1 - 2013

N2 - In this paper, Ga0.6Ge2.8Sb2.6Te 4 film was investigated for long data retention phase change memory application. Compared with Ge2Sb2Te5, Ga 0.6Ge2.8Sb2.6Te4 film has higher crystallization temperatures (~ 240 C) and larger crystallization activation energy (~ 2.9 eV), which lead to a higher temperature (~ 135 C) for ten year data retention. The reversible phase change can be realized by a 100-ns width electric pulse. Ga0.6Ge2.8Sb2.6Te4 based cell shows good endurance up to 1.05 × 105 SET-RESET cycles during endurance test.

AB - In this paper, Ga0.6Ge2.8Sb2.6Te 4 film was investigated for long data retention phase change memory application. Compared with Ge2Sb2Te5, Ga 0.6Ge2.8Sb2.6Te4 film has higher crystallization temperatures (~ 240 C) and larger crystallization activation energy (~ 2.9 eV), which lead to a higher temperature (~ 135 C) for ten year data retention. The reversible phase change can be realized by a 100-ns width electric pulse. Ga0.6Ge2.8Sb2.6Te4 based cell shows good endurance up to 1.05 × 105 SET-RESET cycles during endurance test.

KW - A. Phase change material

KW - D. Data retention

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84885395139

U2 - 10.1016/j.jnoncrysol.2013.09.017

DO - 10.1016/j.jnoncrysol.2013.09.017

M3 - 文章

AN - SCOPUS:84885395139

SN - 0022-3093

VL - 381

SP - 54

EP - 57

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -

Study on GeGaSbTe film for long data retention phase change memory application

Abstract

Keywords

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