Study on capacitance-voltage properties of Bi2Ti 2O7/n-Si (100) films

Shao Wei Wang; Wei Lu; Xiao Shuang Chen; Ning Dai; Xue Chu Shen; Hong Wang; Min Wang

doi:10.1063/1.1490628

Study on capacitance-voltage properties of Bi₂Ti ₂O₇/n-Si (100) films

Shao Wei Wang^*
, Wei Lu
, Xiao Shuang Chen
, Ning Dai
, Xue Chu Shen
, Hong Wang
, Min Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The capacitance-voltage (C-V) behavior of the metal/Bi₂Ti ₂O₇/n-Si metal-oxide-semiconductor (MOS) structure has been studied. The analyses of C-V curves show that a high builtin voltage of 11 V on Si can be achieved by bias-temperature (BT) process. The hysteresis loops in C-V curves of the MOS structure were also observed clearly. From the dependence of C-V properties on different BT processes, it is deduced that the hysteresis loops are dominated by the mobile negative charges in the oxide.

Original language	English
Pages (from-to)	111-113
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	1
DOIs	https://doi.org/10.1063/1.1490628
State	Published - 1 Jul 2002
Externally published	Yes

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@article{5e25a5bfe9e649548d0ea089f33d6a88,

title = "Study on capacitance-voltage properties of Bi2Ti 2O7/n-Si (100) films",

abstract = "The capacitance-voltage (C-V) behavior of the metal/Bi2Ti 2O7/n-Si metal-oxide-semiconductor (MOS) structure has been studied. The analyses of C-V curves show that a high builtin voltage of 11 V on Si can be achieved by bias-temperature (BT) process. The hysteresis loops in C-V curves of the MOS structure were also observed clearly. From the dependence of C-V properties on different BT processes, it is deduced that the hysteresis loops are dominated by the mobile negative charges in the oxide.",

author = "Wang, \{Shao Wei\} and Wei Lu and Chen, \{Xiao Shuang\} and Ning Dai and Shen, \{Xue Chu\} and Hong Wang and Min Wang",

year = "2002",

month = jul,

day = "1",

doi = "10.1063/1.1490628",

language = "英语",

volume = "81",

pages = "111--113",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Study on capacitance-voltage properties of Bi2Ti 2O7/n-Si (100) films

AU - Wang, Shao Wei

AU - Lu, Wei

AU - Chen, Xiao Shuang

AU - Dai, Ning

AU - Shen, Xue Chu

AU - Wang, Hong

AU - Wang, Min

PY - 2002/7/1

Y1 - 2002/7/1

N2 - The capacitance-voltage (C-V) behavior of the metal/Bi2Ti 2O7/n-Si metal-oxide-semiconductor (MOS) structure has been studied. The analyses of C-V curves show that a high builtin voltage of 11 V on Si can be achieved by bias-temperature (BT) process. The hysteresis loops in C-V curves of the MOS structure were also observed clearly. From the dependence of C-V properties on different BT processes, it is deduced that the hysteresis loops are dominated by the mobile negative charges in the oxide.

AB - The capacitance-voltage (C-V) behavior of the metal/Bi2Ti 2O7/n-Si metal-oxide-semiconductor (MOS) structure has been studied. The analyses of C-V curves show that a high builtin voltage of 11 V on Si can be achieved by bias-temperature (BT) process. The hysteresis loops in C-V curves of the MOS structure were also observed clearly. From the dependence of C-V properties on different BT processes, it is deduced that the hysteresis loops are dominated by the mobile negative charges in the oxide.

UR - https://www.scopus.com/pages/publications/79955987160

U2 - 10.1063/1.1490628

DO - 10.1063/1.1490628

M3 - 文章

AN - SCOPUS:79955987160

SN - 0003-6951

VL - 81

SP - 111

EP - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Study on capacitance-voltage properties of Bi₂Ti ₂O₇/n-Si (100) films

Abstract

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