Study of structural and optical properties of Cu2ZnSnS4 and Cu2ZnGeS4 thin films synthesized by sulfurization of stacked metallic layers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

Cu2ZnSnS4 and Cu2ZnGeS4 thin films made from the earth abundant and non-toxic materials are quaternary semiconducting compounds which have received increasing interest for solar cells applications. Cu2ZnSnS4 and Cu2ZnGeS4 thin films have been synthesized by sulfurization of radio frequency magnetron sputtered precursors. The structural and optical properties of the thin films have been investigated and discussed. The result of X-ray diffraction demonstrates that the Cu2ZnSnS4 and Cu2ZnGeS4 thin films have kesterite (KS; space group 4) crystal structure. An obvious blue shift is observed in the Raman spectra as smaller Ge replaces Sn. It is due to the fact that the radius of Ge cation is smaller than that of Sn cation, which results in the shrink of the lattice. Further transmission spectra demonstrate that the values of band gap for CZTS and CZGS thin films are 1.54 eV and 1.98 eV, respectively.

Original languageEnglish
Title of host publicationEnergy and Environmental Materials II
EditorsYafang Han, Jiatao Zhang, Jianguo Zhu
PublisherTrans Tech Publications Ltd
Pages44-48
Number of pages5
ISBN (Print)9783038353935
DOIs
StatePublished - 2015
EventChinese Materials Congress, CMC 2014 - Chengdu, China
Duration: 4 Jul 20147 Jul 2014

Publication series

NameMaterials Science Forum
Volume814
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceChinese Materials Congress, CMC 2014
Country/TerritoryChina
CityChengdu
Period4/07/147/07/14

Keywords

  • CuZnSnS thin film
  • Solar energy materials
  • Sputtering
  • Sulfurization

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