Study of optical characteristics of damage in oxygen-implanted 6H-SiC

Lianwei Wang, Jipo Huang, Chenglu Lin, Shichang Zou, Yuxiang Zheng, Xinjun Wang, Daming Huang, C. M. Zetterling, M. Östling

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Oxygen ions, with an energy of 70 keV, and doses ranging from 5×1013 to 5×1015 cm-2, were implanted into 6H SiC. The damage energies were calculated as 0.93-93 eV/atom with the doses respectively. The dielectric function obtained from spectroscopic ellipsometry were quite sensitive to ion irradiation of the surface, while the first order Raman spectroscopy decreased in intensity with increasing O+ ion dose. The damage behavior characterized by optical measurements was in good agreement with characterization by Rutherford backscattering spectrometry and channeling and atomic force microscopy.

Original languageEnglish
Pages (from-to)979-982
Number of pages4
JournalJournal of Materials Science Letters
Volume18
Issue number12
DOIs
StatePublished - 1999
Externally publishedYes

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