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Study of impurity states in p-type Hg1-xCdxTe using far-infrared spectroscopy

  • Biao Li*
  • , Yongsheng Gui
  • , Zhanghai Chen
  • , Hongjuan Ye
  • , Junhao Chu
  • , Shanli Wang
  • , Rongbin Ji
  • , Li He
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journalArticlepeer-review

Abstract

This letter reports the far-infrared (FIR) transmission spectra of undoped and Sb-doped p-type Hg1-xCdxTe films grown by a liquid-phase epitaxy (LPE) or molecular-beam epitaxy (MBE) technique. The activation energies of cation vacancy acceptor are found to be ∼10-12 meV and are almost independent on Cd composition. The absorption strength per Hg vacancy, useful for evaluating the cation vacancy density from the absorption spectra, is derived as 3.4×10-12cm. Further, Zeeman splitting resulting from two different acceptors is observed from magnetotransmission measurement for the Sb-doped LPE sample, and light hole effective mass is estimated. FIR transmission seems to be a powerful tool for nondestructive characterization of impurity states in Hg1-xCdxTe.

Original languageEnglish
Pages (from-to)1538-1540
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number11
DOIs
StatePublished - 1998
Externally publishedYes

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