Study of impurity states in p-type Hg1-xCdxTe using far-infrared spectroscopy

Biao Li*, Yongsheng Gui, Zhanghai Chen, Hongjuan Ye, Junhao Chu, Shanli Wang, Rongbin Ji, Li He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

This letter reports the far-infrared (FIR) transmission spectra of undoped and Sb-doped p-type Hg1-xCdxTe films grown by a liquid-phase epitaxy (LPE) or molecular-beam epitaxy (MBE) technique. The activation energies of cation vacancy acceptor are found to be ∼10-12 meV and are almost independent on Cd composition. The absorption strength per Hg vacancy, useful for evaluating the cation vacancy density from the absorption spectra, is derived as 3.4×10-12cm. Further, Zeeman splitting resulting from two different acceptors is observed from magnetotransmission measurement for the Sb-doped LPE sample, and light hole effective mass is estimated. FIR transmission seems to be a powerful tool for nondestructive characterization of impurity states in Hg1-xCdxTe.

Original languageEnglish
Pages (from-to)1538-1540
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number11
DOIs
StatePublished - 1998
Externally publishedYes

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