Abstract
The absorption and photocurrent spectra of polycrystalline β‐FeSi2 thin films are studied in relation with the substrate temperature. The photocurrent spectra involving the fundamental interband, extrinsic defect transitions of β‐FeSi2, and the intrinsic transitions of Si substrates are observed. These transition energies are in good agreement with the results of absorption measurements. The advantages of photocurrent measurements for studying the energy band structure of β‐FeSi2 are revealed.
| Original language | English |
|---|---|
| Pages (from-to) | 511-515 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (B): Basic Research |
| Volume | 187 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1 Feb 1995 |
| Externally published | Yes |