Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement

Jun Li; Le Zhang; Wei Ou-Yang; Dai Taguchi; Takaaki Manaka; Mitsumasa Iwamoto

doi:10.1143/JJAP.49.121601

Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement

Jun Li^*
, Le Zhang
, Wei Ou-Yang
, Dai Taguchi
, Takaaki Manaka
, Mitsumasa Iwamoto

^*Corresponding author for this work

Institute of Science Tokyo

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Through electric-field-induced second-harmonic generation (EFISHG) measurement, we studied carrier injection and accumulation in a pentacene layer under the effect of dipole reversal in a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] layer. The change in the electric field in the pentacene layer due to polarization reversal in the P(VDF-TrFE) layer was determined by direct probing. Using the value of remnant polarization of P(VDF-TrFE) obtained from displacement current measurement (DCM), we showed that the EFISHG response closely reflected the hole injection and accumulation at the pentacene/P(VDF-TrFE) interface induced by spontaneous polarization in P(VDF-TrFE).

Original language	English
Article number	121601
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	49
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.49.121601
State	Published - Dec 2010
Externally published	Yes

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Li, J., Zhang, L., Ou-Yang, W., Taguchi, D., Manaka, T., & Iwamoto, M. (2010). Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 49(12), Article 121601. https://doi.org/10.1143/JJAP.49.121601

Li, Jun ; Zhang, Le ; Ou-Yang, Wei et al. / Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2010 ; Vol. 49, No. 12.

@article{eaac10b7380a485bbe65f1c01e79c076,

title = "Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement",

abstract = "Through electric-field-induced second-harmonic generation (EFISHG) measurement, we studied carrier injection and accumulation in a pentacene layer under the effect of dipole reversal in a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] layer. The change in the electric field in the pentacene layer due to polarization reversal in the P(VDF-TrFE) layer was determined by direct probing. Using the value of remnant polarization of P(VDF-TrFE) obtained from displacement current measurement (DCM), we showed that the EFISHG response closely reflected the hole injection and accumulation at the pentacene/P(VDF-TrFE) interface induced by spontaneous polarization in P(VDF-TrFE).",

author = "Jun Li and Le Zhang and Wei Ou-Yang and Dai Taguchi and Takaaki Manaka and Mitsumasa Iwamoto",

year = "2010",

month = dec,

doi = "10.1143/JJAP.49.121601",

language = "英语",

volume = "49",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12",

}

Li, J, Zhang, L, Ou-Yang, W, Taguchi, D, Manaka, T & Iwamoto, M 2010, 'Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 49, no. 12, 121601. https://doi.org/10.1143/JJAP.49.121601

Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement. / Li, Jun; Zhang, Le; Ou-Yang, Wei et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 49, No. 12, 121601, 12.2010.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement

AU - Li, Jun

AU - Zhang, Le

AU - Ou-Yang, Wei

AU - Taguchi, Dai

AU - Manaka, Takaaki

AU - Iwamoto, Mitsumasa

PY - 2010/12

Y1 - 2010/12

N2 - Through electric-field-induced second-harmonic generation (EFISHG) measurement, we studied carrier injection and accumulation in a pentacene layer under the effect of dipole reversal in a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] layer. The change in the electric field in the pentacene layer due to polarization reversal in the P(VDF-TrFE) layer was determined by direct probing. Using the value of remnant polarization of P(VDF-TrFE) obtained from displacement current measurement (DCM), we showed that the EFISHG response closely reflected the hole injection and accumulation at the pentacene/P(VDF-TrFE) interface induced by spontaneous polarization in P(VDF-TrFE).

AB - Through electric-field-induced second-harmonic generation (EFISHG) measurement, we studied carrier injection and accumulation in a pentacene layer under the effect of dipole reversal in a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] layer. The change in the electric field in the pentacene layer due to polarization reversal in the P(VDF-TrFE) layer was determined by direct probing. Using the value of remnant polarization of P(VDF-TrFE) obtained from displacement current measurement (DCM), we showed that the EFISHG response closely reflected the hole injection and accumulation at the pentacene/P(VDF-TrFE) interface induced by spontaneous polarization in P(VDF-TrFE).

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U2 - 10.1143/JJAP.49.121601

DO - 10.1143/JJAP.49.121601

M3 - 文章

AN - SCOPUS:79551624706

SN - 0021-4922

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Li J, Zhang L, Ou-Yang W, Taguchi D, Manaka T, Iwamoto M. Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2010 Dec;49(12):121601. doi: 10.1143/JJAP.49.121601

Study of carrier behavior in pentacene in a Au/pentacene/ferroelectric poly(vinylidene fluoride-trifluoroethylene)/indium tin oxide structure by electric-field-induced second-harmonic generation measurement

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