Structures and properties of PZT(52/48) thin films with different substrate temperature and oxygen percentage in mixed ar and O2 gas on LNO/Si (100) by sputtering

X. D. Zhang; T. Lin; X. J. Meng; J. L. Sun; J. H. Chu; Sungmin Park; Hyosang Kwon; Jihwan Hwang; Gwangseo Park

doi:10.1080/10584587.2009.490195

Structures and properties of PZT(52/48) thin films with different substrate temperature and oxygen percentage in mixed ar and O₂ gas on LNO/Si (100) by sputtering

X. D. Zhang
, T. Lin
, X. J. Meng
, J. L. Sun
, J. H. Chu
, Sungmin Park
, Hyosang Kwon
, Jihwan Hwang
, Gwangseo Park

School of Physics and Electronic Science

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In this work, PZT (52/48) thin films were deposited at substrate temperature ranging from room temperature (RT) to 600° with various oxygen percentage in a mixed argon and oxygen gas at substrate temperature of 600°C on LNO/Si by an r.f. magnetron sputtering method. It was found that the crystallinities were enhanced with increasing substrate temperature. Hence, the ferroelectricities and electrical properties were also simultaneously improved. The crystallinities degraded with increasing O₂ percentages, hence, the degraded ferroelectricities and relevant electrical properties.

Original language	English
Pages (from-to)	63-71
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	113
Issue number	1
DOIs	https://doi.org/10.1080/10584587.2009.490195
State	Published - 2009
Event	21st International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2 2009 - Colorado Springs, CO, United States Duration: 27 Sep 2009 → 30 Sep 2009

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10.1080/10584587.2009.490195

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@article{1d5a5c17a32f44ef95c537614a989a0d,

title = "Structures and properties of PZT(52/48) thin films with different substrate temperature and oxygen percentage in mixed ar and O2 gas on LNO/Si (100) by sputtering",

abstract = "In this work, PZT (52/48) thin films were deposited at substrate temperature ranging from room temperature (RT) to 600° with various oxygen percentage in a mixed argon and oxygen gas at substrate temperature of 600°C on LNO/Si by an r.f. magnetron sputtering method. It was found that the crystallinities were enhanced with increasing substrate temperature. Hence, the ferroelectricities and electrical properties were also simultaneously improved. The crystallinities degraded with increasing O2 percentages, hence, the degraded ferroelectricities and relevant electrical properties.",

author = "Zhang, \{X. D.\} and T. Lin and Meng, \{X. J.\} and Sun, \{J. L.\} and Chu, \{J. H.\} and Sungmin Park and Hyosang Kwon and Jihwan Hwang and Gwangseo Park",

year = "2009",

doi = "10.1080/10584587.2009.490195",

language = "英语",

volume = "113",

pages = "63--71",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "21st International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2 2009 ; Conference date: 27-09-2009 Through 30-09-2009",

}

TY - JOUR

T1 - Structures and properties of PZT(52/48) thin films with different substrate temperature and oxygen percentage in mixed ar and O2 gas on LNO/Si (100) by sputtering

AU - Zhang, X. D.

AU - Lin, T.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Chu, J. H.

AU - Park, Sungmin

AU - Kwon, Hyosang

AU - Hwang, Jihwan

AU - Park, Gwangseo

PY - 2009

Y1 - 2009

N2 - In this work, PZT (52/48) thin films were deposited at substrate temperature ranging from room temperature (RT) to 600° with various oxygen percentage in a mixed argon and oxygen gas at substrate temperature of 600°C on LNO/Si by an r.f. magnetron sputtering method. It was found that the crystallinities were enhanced with increasing substrate temperature. Hence, the ferroelectricities and electrical properties were also simultaneously improved. The crystallinities degraded with increasing O2 percentages, hence, the degraded ferroelectricities and relevant electrical properties.

AB - In this work, PZT (52/48) thin films were deposited at substrate temperature ranging from room temperature (RT) to 600° with various oxygen percentage in a mixed argon and oxygen gas at substrate temperature of 600°C on LNO/Si by an r.f. magnetron sputtering method. It was found that the crystallinities were enhanced with increasing substrate temperature. Hence, the ferroelectricities and electrical properties were also simultaneously improved. The crystallinities degraded with increasing O2 percentages, hence, the degraded ferroelectricities and relevant electrical properties.

UR - https://www.scopus.com/pages/publications/79955496879

U2 - 10.1080/10584587.2009.490195

DO - 10.1080/10584587.2009.490195

M3 - 会议文章

AN - SCOPUS:79955496879

SN - 1058-4587

VL - 113

SP - 63

EP - 71

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

T2 - 21st International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2 2009

Y2 - 27 September 2009 through 30 September 2009

ER -

Structures and properties of PZT(52/48) thin films with different substrate temperature and oxygen percentage in mixed ar and O₂ gas on LNO/Si (100) by sputtering

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