Structure, optical and electrical properties of Bi₂VO _5.5 films deposited on ITO/glass substrates by chemical solution method

Bismuth vanadate (Bi₂VO_5.5) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrates by chemical solution method combined with a rapid thermal annealing process. The structure of the films was characterized with X-ray diffraction and atomic force microscopy. The Bi₂VO_5.5 films annealed at 600 °C showed a good match with the ITO coated glass substrates and had a desired perovskite structure with high (00l) preferred orientation. The spherical grains with a homogeneous distribution of high crystallinity and packing density were observed. Optical properties of the Bi₂VO_5.5 thin films were studied by Raman spectra and the lattice vibration modes of the films were obtained. A low frequency dielectric dispersion was observed in the films. Dielectric constant and loss was about 75 and 0.076 at 10kHz, respectively. The ac conductivity obeyed Jonscher's universal power law, which may be originated a possible hopping mechanism for Bi₂VO_5.5 thin films. The complex impedance traces revealed material dielectric dispersion nature and the presence of grain effects in the films.