Structure and optical properties of BiFe 1 - XZn xO 3 thin films fabricated by pulsed laser deposition

Nuofan Ding; Hongmei Deng; Pingxiong Yang; Junhao Chu

doi:10.1016/j.matlet.2012.05.025

Structure and optical properties of BiFe _{1 - X}Zn _xO ₃ thin films fabricated by pulsed laser deposition

Nuofan Ding
, Hongmei Deng
, Pingxiong Yang^*
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Multiferroic BiFe _{1 - x}Zn _xO ₃ (0 ≤ x ≤ 0.10) thin films were prepared on LaNiO ₃ coating Si substrates by pulsed laser deposition. X-ray diffraction data confirmed the substitutions of Zn into the Fe site. The films are the dominant orientation of (101). Three A ₁ and five E modes are observed in Raman spectra. With increasing x, the position of the Raman active modes shift to higher wavenumber, and the full width at half maximum becomes smaller. At the photon energy of 2 eV, the refractive index is 2.71, and the extinction coefficient is close to zero. The band gap increases with the Zn amount, which may be caused by Burstein-Moss effect.

Original language	English
Pages (from-to)	71-73
Number of pages	3
Journal	Materials Letters
Volume	82
DOIs	https://doi.org/10.1016/j.matlet.2012.05.025
State	Published - 1 Sep 2012

Keywords

BiFeO
Ferroelectrics
Optical properties
Thin films

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10.1016/j.matlet.2012.05.025

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@article{c4edf0f28f44409ea204906ea34c4484,

title = "Structure and optical properties of BiFe 1 - XZn xO 3 thin films fabricated by pulsed laser deposition",

abstract = "Multiferroic BiFe 1 - xZn xO 3 (0 ≤ x ≤ 0.10) thin films were prepared on LaNiO 3 coating Si substrates by pulsed laser deposition. X-ray diffraction data confirmed the substitutions of Zn into the Fe site. The films are the dominant orientation of (101). Three A 1 and five E modes are observed in Raman spectra. With increasing x, the position of the Raman active modes shift to higher wavenumber, and the full width at half maximum becomes smaller. At the photon energy of 2 eV, the refractive index is 2.71, and the extinction coefficient is close to zero. The band gap increases with the Zn amount, which may be caused by Burstein-Moss effect.",

keywords = "BiFeO, Ferroelectrics, Optical properties, Thin films",

author = "Nuofan Ding and Hongmei Deng and Pingxiong Yang and Junhao Chu",

year = "2012",

month = sep,

day = "1",

doi = "10.1016/j.matlet.2012.05.025",

language = "英语",

volume = "82",

pages = "71--73",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Structure and optical properties of BiFe 1 - XZn xO 3 thin films fabricated by pulsed laser deposition

AU - Ding, Nuofan

AU - Deng, Hongmei

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2012/9/1

Y1 - 2012/9/1

N2 - Multiferroic BiFe 1 - xZn xO 3 (0 ≤ x ≤ 0.10) thin films were prepared on LaNiO 3 coating Si substrates by pulsed laser deposition. X-ray diffraction data confirmed the substitutions of Zn into the Fe site. The films are the dominant orientation of (101). Three A 1 and five E modes are observed in Raman spectra. With increasing x, the position of the Raman active modes shift to higher wavenumber, and the full width at half maximum becomes smaller. At the photon energy of 2 eV, the refractive index is 2.71, and the extinction coefficient is close to zero. The band gap increases with the Zn amount, which may be caused by Burstein-Moss effect.

AB - Multiferroic BiFe 1 - xZn xO 3 (0 ≤ x ≤ 0.10) thin films were prepared on LaNiO 3 coating Si substrates by pulsed laser deposition. X-ray diffraction data confirmed the substitutions of Zn into the Fe site. The films are the dominant orientation of (101). Three A 1 and five E modes are observed in Raman spectra. With increasing x, the position of the Raman active modes shift to higher wavenumber, and the full width at half maximum becomes smaller. At the photon energy of 2 eV, the refractive index is 2.71, and the extinction coefficient is close to zero. The band gap increases with the Zn amount, which may be caused by Burstein-Moss effect.

KW - BiFeO

KW - Ferroelectrics

KW - Optical properties

KW - Thin films

UR - https://www.scopus.com/pages/publications/84863110087

U2 - 10.1016/j.matlet.2012.05.025

DO - 10.1016/j.matlet.2012.05.025

M3 - 文章

AN - SCOPUS:84863110087

SN - 0167-577X

VL - 82

SP - 71

EP - 73

JO - Materials Letters

JF - Materials Letters

ER -

Structure and optical properties of BiFe _{1 - X}Zn _xO ₃ thin films fabricated by pulsed laser deposition

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Keywords

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