Structure and ferroelectric properties of Bi3.25La 0.75Ti3O12 and Bi3.25Nd 0.75Ti3O12 thin films prepared by a MOD method

Jian Hua Ma; Xiang Jian Meng; Jin Lan Sun; Tie Lin; Jun Hao Chu

doi:10.1117/12.607334

Structure and ferroelectric properties of Bi_3.25La _0.75Ti₃O₁₂ and Bi_3.25Nd _0.75Ti₃O₁₂ thin films prepared by a MOD method

Jian Hua Ma^*, Xiang Jian Meng, Jin Lan Sun, Tie Lin, Jun Hao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The structure and ferroelectric properties of Bi_3.25La _0.75Ti₃O₁₂ (BLT) and Bi_3.25Nd _0.75Ti₃O₁₂ (BNT) thin films deposited on (111)Pt/Ti/SiO₂/Si substrates using a metalorganic decomposition (MOD) method were investigated. Both the films were polycrystalline structure with the single bismuth-layered phase. The BNT film showed the (117) random orientation, while the BLT film displayed (00l)-preferential orientation. The BNT film showed a larger remnant polarization (∼13.8μ,C/cm²) than the BLT film (∼3.5μC/cm²), while both films displayed almost the same value of coercive field. The BNT film had the larger dielectric constant and a litter larger dissipation factor than the BLT film. The superior ferroelectricity of the BNT film was mainly attributed to its (117) random orientation. Furthermore, the BNT film displayed good fatigue endurance up to 10⁹ switching cycles, indicating it was a useful candidate for integrated device applications.

Original language	English
Article number	69
Pages (from-to)	299-302
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.607334
State	Published - 2005
Externally published	Yes
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Keywords

Bi LaTiO films
Bi NdTiO films
Crystallographic orientation
Ferroelectric properties

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10.1117/12.607334

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@article{6d5473bb354946e38f7f7c5a1a77464b,

title = "Structure and ferroelectric properties of Bi3.25La 0.75Ti3O12 and Bi3.25Nd 0.75Ti3O12 thin films prepared by a MOD method",

abstract = "The structure and ferroelectric properties of Bi3.25La 0.75Ti3O12 (BLT) and Bi3.25Nd 0.75Ti3O12 (BNT) thin films deposited on (111)Pt/Ti/SiO2/Si substrates using a metalorganic decomposition (MOD) method were investigated. Both the films were polycrystalline structure with the single bismuth-layered phase. The BNT film showed the (117) random orientation, while the BLT film displayed (00l)-preferential orientation. The BNT film showed a larger remnant polarization (∼13.8μ,C/cm2) than the BLT film (∼3.5μC/cm2), while both films displayed almost the same value of coercive field. The BNT film had the larger dielectric constant and a litter larger dissipation factor than the BLT film. The superior ferroelectricity of the BNT film was mainly attributed to its (117) random orientation. Furthermore, the BNT film displayed good fatigue endurance up to 109 switching cycles, indicating it was a useful candidate for integrated device applications.",

keywords = "Bi LaTiO films, Bi NdTiO films, Crystallographic orientation, Ferroelectric properties",

author = "Ma, \{Jian Hua\} and Meng, \{Xiang Jian\} and Sun, \{Jin Lan\} and Tie Lin and Chu, \{Jun Hao\}",

year = "2005",

doi = "10.1117/12.607334",

language = "英语",

volume = "5774",

pages = "299--302",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

}

TY - JOUR

T1 - Structure and ferroelectric properties of Bi3.25La 0.75Ti3O12 and Bi3.25Nd 0.75Ti3O12 thin films prepared by a MOD method

AU - Ma, Jian Hua

AU - Meng, Xiang Jian

AU - Sun, Jin Lan

AU - Lin, Tie

AU - Chu, Jun Hao

PY - 2005

Y1 - 2005

N2 - The structure and ferroelectric properties of Bi3.25La 0.75Ti3O12 (BLT) and Bi3.25Nd 0.75Ti3O12 (BNT) thin films deposited on (111)Pt/Ti/SiO2/Si substrates using a metalorganic decomposition (MOD) method were investigated. Both the films were polycrystalline structure with the single bismuth-layered phase. The BNT film showed the (117) random orientation, while the BLT film displayed (00l)-preferential orientation. The BNT film showed a larger remnant polarization (∼13.8μ,C/cm2) than the BLT film (∼3.5μC/cm2), while both films displayed almost the same value of coercive field. The BNT film had the larger dielectric constant and a litter larger dissipation factor than the BLT film. The superior ferroelectricity of the BNT film was mainly attributed to its (117) random orientation. Furthermore, the BNT film displayed good fatigue endurance up to 109 switching cycles, indicating it was a useful candidate for integrated device applications.

AB - The structure and ferroelectric properties of Bi3.25La 0.75Ti3O12 (BLT) and Bi3.25Nd 0.75Ti3O12 (BNT) thin films deposited on (111)Pt/Ti/SiO2/Si substrates using a metalorganic decomposition (MOD) method were investigated. Both the films were polycrystalline structure with the single bismuth-layered phase. The BNT film showed the (117) random orientation, while the BLT film displayed (00l)-preferential orientation. The BNT film showed a larger remnant polarization (∼13.8μ,C/cm2) than the BLT film (∼3.5μC/cm2), while both films displayed almost the same value of coercive field. The BNT film had the larger dielectric constant and a litter larger dissipation factor than the BLT film. The superior ferroelectricity of the BNT film was mainly attributed to its (117) random orientation. Furthermore, the BNT film displayed good fatigue endurance up to 109 switching cycles, indicating it was a useful candidate for integrated device applications.

KW - Bi LaTiO films

KW - Bi NdTiO films

KW - Crystallographic orientation

KW - Ferroelectric properties

UR - https://www.scopus.com/pages/publications/25644450451

U2 - 10.1117/12.607334

DO - 10.1117/12.607334

M3 - 会议文章

AN - SCOPUS:25644450451

SN - 0277-786X

VL - 5774

SP - 299

EP - 302

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 69

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Structure and ferroelectric properties of Bi_3.25La _0.75Ti₃O₁₂ and Bi_3.25Nd _0.75Ti₃O₁₂ thin films prepared by a MOD method

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