Structural, optical and electrical properties of delafossite CuGaO 2 films grown by sol-gel method

M. J. Han; T. Huang; J. Z. Zhang; Y. W. Li; Z. G. Hu

doi:10.1117/12.2053125

Structural, optical and electrical properties of delafossite CuGaO ₂ films grown by sol-gel method

M. J. Han
, T. Huang
, J. Z. Zhang
, Y. W. Li
, Z. G. Hu^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

Transparent p-type conductive CuGaO₂ films have been fabricated on sapphire substrates by sol-gel method. The stable sol solution for CuGaO ₂ were formed by copper(II) acetate monohydrate and gallium(III) nitrate hydrate, and the c-axis orientation of CuGaO₂ films were strengthened with increasing annealing temperature. The pure phase CuGaO ₂ film was obtained at 900°C for 30 min in N2 atmosphere, and its microstructure, compositions, optical and electrical properties were analyzed. It was found that the sol-gel derived CuGaO₂ films show a high optical transparency (60-80%) in the visible region, the direct and indirect band gaps were approximately 3.56 and 3.24 eV, respectively. It shows a crossover from the thermal activation behavior to that of three-dimensional variable range hopping from the temperature-dependent electrical conductivity at about 160 K.

Original language	English
Title of host publication	Eighth International Conference on Thin Film Physics and Applications
DOIs	https://doi.org/10.1117/12.2053125
State	Published - 2013
Event	8th International Conference on Thin Film Physics and Applications, TFPA 2013 - Shanghai, China Duration: 20 Sep 2013 → 23 Sep 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9068
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	8th International Conference on Thin Film Physics and Applications, TFPA 2013
Country/Territory	China
City	Shanghai
Period	20/09/13 → 23/09/13

Keywords

Delafossite
P-type
Sol-gel
TCOs film

Access to Document

10.1117/12.2053125

Cite this

Han, M. J., Huang, T., Zhang, J. Z., Li, Y. W., & Hu, Z. G. (2013). Structural, optical and electrical properties of delafossite CuGaO ₂ films grown by sol-gel method. In Eighth International Conference on Thin Film Physics and Applications Article 906809 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9068). https://doi.org/10.1117/12.2053125

@inproceedings{356fb2589c184672840b5885689c1888,

title = "Structural, optical and electrical properties of delafossite CuGaO 2 films grown by sol-gel method",

abstract = "Transparent p-type conductive CuGaO2 films have been fabricated on sapphire substrates by sol-gel method. The stable sol solution for CuGaO 2 were formed by copper(II) acetate monohydrate and gallium(III) nitrate hydrate, and the c-axis orientation of CuGaO2 films were strengthened with increasing annealing temperature. The pure phase CuGaO 2 film was obtained at 900°C for 30 min in N2 atmosphere, and its microstructure, compositions, optical and electrical properties were analyzed. It was found that the sol-gel derived CuGaO2 films show a high optical transparency (60-80\%) in the visible region, the direct and indirect band gaps were approximately 3.56 and 3.24 eV, respectively. It shows a crossover from the thermal activation behavior to that of three-dimensional variable range hopping from the temperature-dependent electrical conductivity at about 160 K.",

keywords = "Delafossite, P-type, Sol-gel, TCOs film",

author = "Han, \{M. J.\} and T. Huang and Zhang, \{J. Z.\} and Li, \{Y. W.\} and Hu, \{Z. G.\}",

year = "2013",

doi = "10.1117/12.2053125",

language = "英语",

isbn = "9780819499974",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Eighth International Conference on Thin Film Physics and Applications",

note = "8th International Conference on Thin Film Physics and Applications, TFPA 2013 ; Conference date: 20-09-2013 Through 23-09-2013",

}

Han, MJ, Huang, T, Zhang, JZ, Li, YW & Hu, ZG 2013, Structural, optical and electrical properties of delafossite CuGaO ₂ films grown by sol-gel method. in Eighth International Conference on Thin Film Physics and Applications., 906809, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9068, 8th International Conference on Thin Film Physics and Applications, TFPA 2013, Shanghai, China, 20/09/13. https://doi.org/10.1117/12.2053125

Structural, optical and electrical properties of delafossite CuGaO ₂ films grown by sol-gel method. / Han, M. J.; Huang, T.; Zhang, J. Z. et al.
Eighth International Conference on Thin Film Physics and Applications. 2013. 906809 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9068).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Structural, optical and electrical properties of delafossite CuGaO 2 films grown by sol-gel method

AU - Han, M. J.

AU - Huang, T.

AU - Zhang, J. Z.

AU - Li, Y. W.

AU - Hu, Z. G.

PY - 2013

Y1 - 2013

N2 - Transparent p-type conductive CuGaO2 films have been fabricated on sapphire substrates by sol-gel method. The stable sol solution for CuGaO 2 were formed by copper(II) acetate monohydrate and gallium(III) nitrate hydrate, and the c-axis orientation of CuGaO2 films were strengthened with increasing annealing temperature. The pure phase CuGaO 2 film was obtained at 900°C for 30 min in N2 atmosphere, and its microstructure, compositions, optical and electrical properties were analyzed. It was found that the sol-gel derived CuGaO2 films show a high optical transparency (60-80%) in the visible region, the direct and indirect band gaps were approximately 3.56 and 3.24 eV, respectively. It shows a crossover from the thermal activation behavior to that of three-dimensional variable range hopping from the temperature-dependent electrical conductivity at about 160 K.

AB - Transparent p-type conductive CuGaO2 films have been fabricated on sapphire substrates by sol-gel method. The stable sol solution for CuGaO 2 were formed by copper(II) acetate monohydrate and gallium(III) nitrate hydrate, and the c-axis orientation of CuGaO2 films were strengthened with increasing annealing temperature. The pure phase CuGaO 2 film was obtained at 900°C for 30 min in N2 atmosphere, and its microstructure, compositions, optical and electrical properties were analyzed. It was found that the sol-gel derived CuGaO2 films show a high optical transparency (60-80%) in the visible region, the direct and indirect band gaps were approximately 3.56 and 3.24 eV, respectively. It shows a crossover from the thermal activation behavior to that of three-dimensional variable range hopping from the temperature-dependent electrical conductivity at about 160 K.

KW - Delafossite

KW - P-type

KW - Sol-gel

KW - TCOs film

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Eighth International Conference on Thin Film Physics and Applications

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