Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr0.5, Ti0.5)O3 multilayer films derived by chemical solution deposition

Y. W. Li; J. L. Sun; J. Chen; X. J. Meng; J. H. Chu

doi:10.1063/1.2120907

Structural, ferroelectric, dielectric, and magnetic properties of BiFeO₃/Pb(Zr_0.5, Ti_0.5)O₃ multilayer films derived by chemical solution deposition

Y. W. Li, J. L. Sun, J. Chen, X. J. Meng, J. H. Chu

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

BiFe O3 Pb (Zr0.5, Ti0.5) O3 (BFO/PZT) multilayer films have been grown on platinum-coated silicon substrate by chemical solution deposition. The remnant polarization is about 12 μC cm2, which is much bigger than most of pure BFO thin films. P-E measurement shows that there are more obstacles affecting the motion of the domain wall in the multilayer films than those in the pure PZT films. This conclusion is also confirmed by measuring the dependence of capacitance with ac field under subswitching field. The frequency dependence of dielectric loss indicates that the dielectric loss (tan δ) of the multilayer is smaller than that of the PZT thin films at high frequency. Magnetic measurement indicates that the multilayer films are antiferromagnetic.

Original language	English
Article number	182902
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	18
DOIs	https://doi.org/10.1063/1.2120907
State	Published - 31 Oct 2005
Externally published	Yes

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title = "Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr0.5, Ti0.5)O3 multilayer films derived by chemical solution deposition",

abstract = "BiFe O3 Pb (Zr0.5, Ti0.5) O3 (BFO/PZT) multilayer films have been grown on platinum-coated silicon substrate by chemical solution deposition. The remnant polarization is about 12 μC cm2, which is much bigger than most of pure BFO thin films. P-E measurement shows that there are more obstacles affecting the motion of the domain wall in the multilayer films than those in the pure PZT films. This conclusion is also confirmed by measuring the dependence of capacitance with ac field under subswitching field. The frequency dependence of dielectric loss indicates that the dielectric loss (tan δ) of the multilayer is smaller than that of the PZT thin films at high frequency. Magnetic measurement indicates that the multilayer films are antiferromagnetic.",

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T1 - Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr0.5, Ti0.5)O3 multilayer films derived by chemical solution deposition

AU - Li, Y. W.

AU - Sun, J. L.

AU - Chen, J.

AU - Meng, X. J.

AU - Chu, J. H.

PY - 2005/10/31

Y1 - 2005/10/31

N2 - BiFe O3 Pb (Zr0.5, Ti0.5) O3 (BFO/PZT) multilayer films have been grown on platinum-coated silicon substrate by chemical solution deposition. The remnant polarization is about 12 μC cm2, which is much bigger than most of pure BFO thin films. P-E measurement shows that there are more obstacles affecting the motion of the domain wall in the multilayer films than those in the pure PZT films. This conclusion is also confirmed by measuring the dependence of capacitance with ac field under subswitching field. The frequency dependence of dielectric loss indicates that the dielectric loss (tan δ) of the multilayer is smaller than that of the PZT thin films at high frequency. Magnetic measurement indicates that the multilayer films are antiferromagnetic.

AB - BiFe O3 Pb (Zr0.5, Ti0.5) O3 (BFO/PZT) multilayer films have been grown on platinum-coated silicon substrate by chemical solution deposition. The remnant polarization is about 12 μC cm2, which is much bigger than most of pure BFO thin films. P-E measurement shows that there are more obstacles affecting the motion of the domain wall in the multilayer films than those in the pure PZT films. This conclusion is also confirmed by measuring the dependence of capacitance with ac field under subswitching field. The frequency dependence of dielectric loss indicates that the dielectric loss (tan δ) of the multilayer is smaller than that of the PZT thin films at high frequency. Magnetic measurement indicates that the multilayer films are antiferromagnetic.

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M3 - 文章

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Structural, ferroelectric, dielectric, and magnetic properties of BiFeO₃/Pb(Zr_0.5, Ti_0.5)O₃ multilayer films derived by chemical solution deposition

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