Structural characterization of codeposition growth β-FeSi2 film

Chenglu Lin; Lianwei Wang; Xiangdong Chen; L. F. Chen; L. M. Wang

doi:10.1143/jjap.37.622

Structural characterization of codeposition growth β-FeSi₂ film

Chenglu Lin^*, Lianwei Wang, Xiangdong Chen, L. F. Chen, L. M. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Epitaxial β-FeSi₂ film on Si(111) was prepared by codeposition of iron and silicon onto a β-FeSi₂ template at 400°C and subsequent annealing at 700°C for 2h. The template was prepared by reactive deposition epitaxy on Si(111). X-ray diffraction (XRD) pattern shows only β-FeSi₂(202) or (220) peak which is in correspondence with the epitaxial β-FeSi₂(101) or (110) on Si(111). Cross-sectional transmission electron microscopy (XTEM) and high resolution TEM (HRTEM) observation show that the β-FeSi₂/Si interface was quite flat near atomic level. Conversion electron Msbauer spectrum proves that the film grows in one or more epitaxial equivalent orientations rather than in a polycrystalline manner.

Original language	English
Pages (from-to)	622-625
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	2
DOIs	https://doi.org/10.1143/jjap.37.622
State	Published - Feb 1998
Externally published	Yes

Keywords

Co-deposition
Epitaxial growth
Mössbauer
Resistance
Structure
TEM
β-FeSi

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10.1143/jjap.37.622

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title = "Structural characterization of codeposition growth β-FeSi2 film",

abstract = "Epitaxial β-FeSi2 film on Si(111) was prepared by codeposition of iron and silicon onto a β-FeSi2 template at 400°C and subsequent annealing at 700°C for 2h. The template was prepared by reactive deposition epitaxy on Si(111). X-ray diffraction (XRD) pattern shows only β-FeSi2(202) or (220) peak which is in correspondence with the epitaxial β-FeSi2(101) or (110) on Si(111). Cross-sectional transmission electron microscopy (XTEM) and high resolution TEM (HRTEM) observation show that the β-FeSi2/Si interface was quite flat near atomic level. Conversion electron Msbauer spectrum proves that the film grows in one or more epitaxial equivalent orientations rather than in a polycrystalline manner.",

keywords = "Co-deposition, Epitaxial growth, M{\"o}ssbauer, Resistance, Structure, TEM, β-FeSi",

author = "Chenglu Lin and Lianwei Wang and Xiangdong Chen and Chen, \{L. F.\} and Wang, \{L. M.\}",

year = "1998",

month = feb,

doi = "10.1143/jjap.37.622",

language = "英语",

volume = "37",

pages = "622--625",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "2",

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TY - JOUR

T1 - Structural characterization of codeposition growth β-FeSi2 film

AU - Lin, Chenglu

AU - Wang, Lianwei

AU - Chen, Xiangdong

AU - Chen, L. F.

AU - Wang, L. M.

PY - 1998/2

Y1 - 1998/2

N2 - Epitaxial β-FeSi2 film on Si(111) was prepared by codeposition of iron and silicon onto a β-FeSi2 template at 400°C and subsequent annealing at 700°C for 2h. The template was prepared by reactive deposition epitaxy on Si(111). X-ray diffraction (XRD) pattern shows only β-FeSi2(202) or (220) peak which is in correspondence with the epitaxial β-FeSi2(101) or (110) on Si(111). Cross-sectional transmission electron microscopy (XTEM) and high resolution TEM (HRTEM) observation show that the β-FeSi2/Si interface was quite flat near atomic level. Conversion electron Msbauer spectrum proves that the film grows in one or more epitaxial equivalent orientations rather than in a polycrystalline manner.

AB - Epitaxial β-FeSi2 film on Si(111) was prepared by codeposition of iron and silicon onto a β-FeSi2 template at 400°C and subsequent annealing at 700°C for 2h. The template was prepared by reactive deposition epitaxy on Si(111). X-ray diffraction (XRD) pattern shows only β-FeSi2(202) or (220) peak which is in correspondence with the epitaxial β-FeSi2(101) or (110) on Si(111). Cross-sectional transmission electron microscopy (XTEM) and high resolution TEM (HRTEM) observation show that the β-FeSi2/Si interface was quite flat near atomic level. Conversion electron Msbauer spectrum proves that the film grows in one or more epitaxial equivalent orientations rather than in a polycrystalline manner.

KW - Co-deposition

KW - Epitaxial growth

KW - Mössbauer

KW - Resistance

KW - Structure

KW - TEM

KW - β-FeSi

UR - https://www.scopus.com/pages/publications/0032003542

U2 - 10.1143/jjap.37.622

DO - 10.1143/jjap.37.622

M3 - 文章

AN - SCOPUS:0032003542

SN - 0021-4922

VL - 37

SP - 622

EP - 625

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 2

ER -

Structural characterization of codeposition growth β-FeSi₂ film

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