Structural characterization of β-FeSi2 films on Si(100) prepared by reactive deposition solid phase epitaxy

Rushan Ni; Lianwei Wang; Qinwo Shen; Chenglu Lin

Structural characterization of β-FeSi₂ films on Si(100) prepared by reactive deposition solid phase epitaxy

Rushan Ni, Lianwei Wang, Qinwo Shen, Chenglu Lin

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Semiconducting β-FeSi₂ films have been synthesized by reactive deposition solid phase epitaxy. X-ray diffraction, Rutherford backscattering spectroscopy and channeling, and transmission electron microscopy have been used to determine the microstructure. Different growth conditions have been compared.

Original language	English
Pages (from-to)	541-545
Number of pages	5
Journal	Journal of Trace and Microprobe Techniques
Volume	15
Issue number	4
State	Published - 1997
Externally published	Yes

Keywords

Growth
Structure
XRD
XTEM
β-FeSi film

Cite this

@article{3e3a6fc33a0b4cea8ac4fd395116057f,

title = "Structural characterization of β-FeSi2 films on Si(100) prepared by reactive deposition solid phase epitaxy",

abstract = "Semiconducting β-FeSi2 films have been synthesized by reactive deposition solid phase epitaxy. X-ray diffraction, Rutherford backscattering spectroscopy and channeling, and transmission electron microscopy have been used to determine the microstructure. Different growth conditions have been compared.",

keywords = "Growth, Structure, XRD, XTEM, β-FeSi film",

author = "Rushan Ni and Lianwei Wang and Qinwo Shen and Chenglu Lin",

year = "1997",

language = "英语",

volume = "15",

pages = "541--545",

journal = "Journal of Trace and Microprobe Techniques",

issn = "0733-4680",

publisher = "Marcel Dekker Inc.",

number = "4",

}

TY - JOUR

T1 - Structural characterization of β-FeSi2 films on Si(100) prepared by reactive deposition solid phase epitaxy

AU - Ni, Rushan

AU - Wang, Lianwei

AU - Shen, Qinwo

AU - Lin, Chenglu

PY - 1997

Y1 - 1997

N2 - Semiconducting β-FeSi2 films have been synthesized by reactive deposition solid phase epitaxy. X-ray diffraction, Rutherford backscattering spectroscopy and channeling, and transmission electron microscopy have been used to determine the microstructure. Different growth conditions have been compared.

AB - Semiconducting β-FeSi2 films have been synthesized by reactive deposition solid phase epitaxy. X-ray diffraction, Rutherford backscattering spectroscopy and channeling, and transmission electron microscopy have been used to determine the microstructure. Different growth conditions have been compared.

KW - Growth

KW - Structure

KW - XRD

KW - XTEM

KW - β-FeSi film

UR - https://www.scopus.com/pages/publications/26444573279

M3 - 文章

AN - SCOPUS:26444573279

SN - 0733-4680

VL - 15

SP - 541

EP - 545

JO - Journal of Trace and Microprobe Techniques

JF - Journal of Trace and Microprobe Techniques

IS - 4

ER -

Structural characterization of β-FeSi₂ films on Si(100) prepared by reactive deposition solid phase epitaxy

Abstract

Keywords

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