Structural and optical properties of LuFeO 3 thin films prepared on silicon (100) substrate by pulsed laser deposition

Liping Zhu; Hongmei Deng; Jianjun Tian; Pingxiong Yang; Junhao Chu

doi:10.1117/12.914548

Structural and optical properties of LuFeO ₃ thin films prepared on silicon (100) substrate by pulsed laser deposition

Liping Zhu, Hongmei Deng, Jianjun Tian, Pingxiong Yang, Junhao Chu

School of Physics and Electronic Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The LuFeO ₃ (LFO) nanocrystalline films with the average grain size of 20 nm have been grown on silicon (100) substrates by pulsed laser deposition. X-ray diffraction (XRD) analysis shows that LFO films are polycrystalline. The microstructure and surface morphology of LFO film are analyzed by Atomic force microscope (AFM) and the surface shows the film is compact. Spectroscopic ellipsometry (SE) was used to extract the optical properties of LFO films in the 1.1-3.1 eV (400-1100 nm) photon energy range at room temperature. By fitting the measured ellipsometric parameter data with a multilayer model system for the LFO thin films, the optical constants and thicknesses of the thin films have been obtained. The refractive index n and extinction coefficient k of the LFO thin films both decreases with increasing thickness.

Original language	English
Title of host publication	Photonics and Optolectronics Meetings (POEM) 2011
Subtitle of host publication	Optoelectronic Devices and Integration
DOIs	https://doi.org/10.1117/12.914548
State	Published - 2012
Event	Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration - Wuhan, China Duration: 2 Nov 2011 → 5 Nov 2011

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8333
ISSN (Print)	0277-786X

Conference

Conference	Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration
Country/Territory	China
City	Wuhan
Period	2/11/11 → 5/11/11

Keywords

Ferroelectric films
LuFeO
Optical properties
Pulsed laser deposition

Access to Document

10.1117/12.914548

Cite this

Zhu, L., Deng, H., Tian, J., Yang, P., & Chu, J. (2012). Structural and optical properties of LuFeO ₃ thin films prepared on silicon (100) substrate by pulsed laser deposition. In Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration Article 83331F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8333). https://doi.org/10.1117/12.914548

@inproceedings{f4cbaf6444c149328a8af2e70697dc98,

title = "Structural and optical properties of LuFeO 3 thin films prepared on silicon (100) substrate by pulsed laser deposition",

abstract = "The LuFeO 3 (LFO) nanocrystalline films with the average grain size of 20 nm have been grown on silicon (100) substrates by pulsed laser deposition. X-ray diffraction (XRD) analysis shows that LFO films are polycrystalline. The microstructure and surface morphology of LFO film are analyzed by Atomic force microscope (AFM) and the surface shows the film is compact. Spectroscopic ellipsometry (SE) was used to extract the optical properties of LFO films in the 1.1-3.1 eV (400-1100 nm) photon energy range at room temperature. By fitting the measured ellipsometric parameter data with a multilayer model system for the LFO thin films, the optical constants and thicknesses of the thin films have been obtained. The refractive index n and extinction coefficient k of the LFO thin films both decreases with increasing thickness.",

keywords = "Ferroelectric films, LuFeO, Optical properties, Pulsed laser deposition",

author = "Liping Zhu and Hongmei Deng and Jianjun Tian and Pingxiong Yang and Junhao Chu",

year = "2012",

doi = "10.1117/12.914548",

language = "英语",

isbn = "9780819489906",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Photonics and Optolectronics Meetings (POEM) 2011",

note = "Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration ; Conference date: 02-11-2011 Through 05-11-2011",

}

Zhu, L, Deng, H, Tian, J, Yang, P & Chu, J 2012, Structural and optical properties of LuFeO ₃ thin films prepared on silicon (100) substrate by pulsed laser deposition. in Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration., 83331F, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8333, Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, Wuhan, China, 2/11/11. https://doi.org/10.1117/12.914548

Structural and optical properties of LuFeO ₃ thin films prepared on silicon (100) substrate by pulsed laser deposition. / Zhu, Liping; Deng, Hongmei; Tian, Jianjun et al.
Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration. 2012. 83331F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8333).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Structural and optical properties of LuFeO 3 thin films prepared on silicon (100) substrate by pulsed laser deposition

AU - Zhu, Liping

AU - Deng, Hongmei

AU - Tian, Jianjun

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2012

Y1 - 2012

N2 - The LuFeO 3 (LFO) nanocrystalline films with the average grain size of 20 nm have been grown on silicon (100) substrates by pulsed laser deposition. X-ray diffraction (XRD) analysis shows that LFO films are polycrystalline. The microstructure and surface morphology of LFO film are analyzed by Atomic force microscope (AFM) and the surface shows the film is compact. Spectroscopic ellipsometry (SE) was used to extract the optical properties of LFO films in the 1.1-3.1 eV (400-1100 nm) photon energy range at room temperature. By fitting the measured ellipsometric parameter data with a multilayer model system for the LFO thin films, the optical constants and thicknesses of the thin films have been obtained. The refractive index n and extinction coefficient k of the LFO thin films both decreases with increasing thickness.

AB - The LuFeO 3 (LFO) nanocrystalline films with the average grain size of 20 nm have been grown on silicon (100) substrates by pulsed laser deposition. X-ray diffraction (XRD) analysis shows that LFO films are polycrystalline. The microstructure and surface morphology of LFO film are analyzed by Atomic force microscope (AFM) and the surface shows the film is compact. Spectroscopic ellipsometry (SE) was used to extract the optical properties of LFO films in the 1.1-3.1 eV (400-1100 nm) photon energy range at room temperature. By fitting the measured ellipsometric parameter data with a multilayer model system for the LFO thin films, the optical constants and thicknesses of the thin films have been obtained. The refractive index n and extinction coefficient k of the LFO thin films both decreases with increasing thickness.

KW - Ferroelectric films

KW - LuFeO

KW - Optical properties

KW - Pulsed laser deposition

UR - https://www.scopus.com/pages/publications/84857575294

U2 - 10.1117/12.914548

DO - 10.1117/12.914548

M3 - 会议稿件

AN - SCOPUS:84857575294

SN - 9780819489906

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Photonics and Optolectronics Meetings (POEM) 2011

T2 - Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration

Y2 - 2 November 2011 through 5 November 2011

ER -