Abstract
Luminescence properties of Er in GaN combined with the structural properties were studied by photoluminescence measurements and X-ray diffraction measurements. It was found that Er atoms occupy two kinds of incorporation sites in GaN and only one kind of site is suggested to be active for the light emission. The maximum luminescence intensity was obtained with the Er concentration at around 4 at%. The concentration quenching was observed and the cause of the quenching is related to the degradation of crystal quality rather than the formation of the segregation.
| Original language | English |
|---|---|
| Pages (from-to) | 3057-3059 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2008 |
| Externally published | Yes |
| Event | 34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 15 Oct 2007 → 18 Oct 2007 |