Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process

G. S. Wang; X. J. Meng; Z. Q. Lai; J. Yu; J. L. Sun; J. G. Cheng; J. Tang; S. L. Guo; J. H. Chu

doi:10.1007/s003390100941

Structural and electrical properties of polycrystalline PbZr_0.5Ti_0.5O₃ films deposited on La_0.5Sr_0.5CoO₃ coated silicon by sol-gel process

G. S. Wang^*
, X. J. Meng
, Z. Q. Lai
, J. Yu
, J. L. Sun
, J. G. Cheng
, J. Tang
, S. L. Guo
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

La_0.5Sr_0.5CoO₃ (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr_0.5Ti_0.5O₃ (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3 × 10⁹ switching cycles and an internal electric field; the remnant polarization P_r and the coercive field E_c are about 22 μC/cm² and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz.

Original language	English
Pages (from-to)	707-710
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	74
Issue number	5
DOIs	https://doi.org/10.1007/s003390100941
State	Published - May 2002
Externally published	Yes

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@article{96b854ff5aca45ce9857bc2af8cfc20d,

title = "Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process",

abstract = "La0.5Sr0.5CoO3 (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr0.5Ti0.5O3 (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3 × 109 switching cycles and an internal electric field; the remnant polarization Pr and the coercive field Ec are about 22 μC/cm2 and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz.",

author = "Wang, \{G. S.\} and Meng, \{X. J.\} and Lai, \{Z. Q.\} and J. Yu and Sun, \{J. L.\} and Cheng, \{J. G.\} and J. Tang and Guo, \{S. L.\} and Chu, \{J. H.\}",

year = "2002",

month = may,

doi = "10.1007/s003390100941",

language = "英语",

volume = "74",

pages = "707--710",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "5",

}

TY - JOUR

T1 - Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process

AU - Wang, G. S.

AU - Meng, X. J.

AU - Lai, Z. Q.

AU - Yu, J.

AU - Sun, J. L.

AU - Cheng, J. G.

AU - Tang, J.

AU - Guo, S. L.

AU - Chu, J. H.

PY - 2002/5

Y1 - 2002/5

N2 - La0.5Sr0.5CoO3 (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr0.5Ti0.5O3 (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3 × 109 switching cycles and an internal electric field; the remnant polarization Pr and the coercive field Ec are about 22 μC/cm2 and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz.

AB - La0.5Sr0.5CoO3 (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr0.5Ti0.5O3 (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3 × 109 switching cycles and an internal electric field; the remnant polarization Pr and the coercive field Ec are about 22 μC/cm2 and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz.

UR - https://www.scopus.com/pages/publications/0036568612

U2 - 10.1007/s003390100941

DO - 10.1007/s003390100941

M3 - 文章

AN - SCOPUS:0036568612

SN - 0947-8396

VL - 74

SP - 707

EP - 710

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 5

ER -

Structural and electrical properties of polycrystalline PbZr_0.5Ti_0.5O₃ films deposited on La_0.5Sr_0.5CoO₃ coated silicon by sol-gel process

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