Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate

Jipo Huang; Lianwei Wang; Qinwo Shen; Chenglu Lin; Mikael Östling

doi:10.1007/s11664-999-0018-x

Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate

Jipo Huang
, Lianwei Wang
, Qinwo Shen
, Chenglu Lin
, Mikael Östling

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

AlN thin films have been grown on Al-covered Si(100) substrates using nitridation in high-purity nitrogen ambient, where the Al layer was previously deposited by ultrahigh vacuum (UHV) electron beam evaporation. The temperature of nitridation plays an important role in the formation of AlN films. The films have been characterized by x-ray diffraction, Fourier transform infrared spectroscopy, atomic force microscopy, transmission electron microscopy, and spreading resistance profile. Results indicate that the AlN films formed by nitridation at 1000 °C for 30 min exhibit the preferred orientation of (002), with spreading resistance above 10⁸Ω.

Original language	English
Pages (from-to)	225-227
Number of pages	3
Journal	Journal of Electronic Materials
Volume	28
Issue number	3
DOIs	https://doi.org/10.1007/s11664-999-0018-x
State	Published - Mar 1999
Externally published	Yes
Event	Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA Duration: 24 Jun 1998 → 26 Jun 1998

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title = "Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate",

abstract = "AlN thin films have been grown on Al-covered Si(100) substrates using nitridation in high-purity nitrogen ambient, where the Al layer was previously deposited by ultrahigh vacuum (UHV) electron beam evaporation. The temperature of nitridation plays an important role in the formation of AlN films. The films have been characterized by x-ray diffraction, Fourier transform infrared spectroscopy, atomic force microscopy, transmission electron microscopy, and spreading resistance profile. Results indicate that the AlN films formed by nitridation at 1000 °C for 30 min exhibit the preferred orientation of (002), with spreading resistance above 108Ω.",

author = "Jipo Huang and Lianwei Wang and Qinwo Shen and Chenglu Lin and Mikael {\"O}stling",

year = "1999",

month = mar,

doi = "10.1007/s11664-999-0018-x",

language = "英语",

volume = "28",

pages = "225--227",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "3",

note = "Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 ; Conference date: 24-06-1998 Through 26-06-1998",

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TY - JOUR

T1 - Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate

AU - Huang, Jipo

AU - Wang, Lianwei

AU - Shen, Qinwo

AU - Lin, Chenglu

AU - Östling, Mikael

PY - 1999/3

Y1 - 1999/3

N2 - AlN thin films have been grown on Al-covered Si(100) substrates using nitridation in high-purity nitrogen ambient, where the Al layer was previously deposited by ultrahigh vacuum (UHV) electron beam evaporation. The temperature of nitridation plays an important role in the formation of AlN films. The films have been characterized by x-ray diffraction, Fourier transform infrared spectroscopy, atomic force microscopy, transmission electron microscopy, and spreading resistance profile. Results indicate that the AlN films formed by nitridation at 1000 °C for 30 min exhibit the preferred orientation of (002), with spreading resistance above 108Ω.

AB - AlN thin films have been grown on Al-covered Si(100) substrates using nitridation in high-purity nitrogen ambient, where the Al layer was previously deposited by ultrahigh vacuum (UHV) electron beam evaporation. The temperature of nitridation plays an important role in the formation of AlN films. The films have been characterized by x-ray diffraction, Fourier transform infrared spectroscopy, atomic force microscopy, transmission electron microscopy, and spreading resistance profile. Results indicate that the AlN films formed by nitridation at 1000 °C for 30 min exhibit the preferred orientation of (002), with spreading resistance above 108Ω.

UR - https://www.scopus.com/pages/publications/0032626975

U2 - 10.1007/s11664-999-0018-x

DO - 10.1007/s11664-999-0018-x

M3 - 会议文章

AN - SCOPUS:0032626975

SN - 0361-5235

VL - 28

SP - 225

EP - 227

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

T2 - Proceedings of the 1998 40th Electronic Materials Conference, EMC-98

Y2 - 24 June 1998 through 26 June 1998

ER -

Structural and electrical characterization of AlN thin films obtained by nitridation of Al/Si substrate

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