Structural and electrical characteristics of oriented Pb(Zr0.52Ti0.48)O3 ferroelectric thin films deposited on diamond substrates by a simple sol-gel process

Jianming Zeng; Lianwei Wang; Jianxia Gao; Zhitang Song; Xiangrong Zhu; Chenglu Lin; Li Hou; Erkai Liu

doi:10.1016/S0022-0248(98)01024-0

Structural and electrical characteristics of oriented Pb(Zr_0.52Ti_0.48)O₃ ferroelectric thin films deposited on diamond substrates by a simple sol-gel process

Jianming Zeng, Lianwei Wang, Jianxia Gao, Zhitang Song, Xiangrong Zhu, Chenglu Lin, Li Hou, Erkai Liu

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We firstly report the successful deposition of highly oriented Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectric thin films on diamond substrates by a simple sol-gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 μC/cm² and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10^-8 A/cm₂ was found at an applied electric field of 120 kV/cm.

Original language	English
Pages (from-to)	874-878
Number of pages	5
Journal	Journal of Crystal Growth
Volume	197
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(98)01024-0
State	Published - 1 Mar 1999
Externally published	Yes

Keywords

Diamond
Ferroelectric thin films
Pb(ZrTi)O
Sol-gel
Surface acoustic wave

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10.1016/S0022-0248(98)01024-0

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@article{6f280484c6eb45c0b2ca7c8411b7efab,

title = "Structural and electrical characteristics of oriented Pb(Zr0.52Ti0.48)O3 ferroelectric thin films deposited on diamond substrates by a simple sol-gel process",

abstract = "We firstly report the successful deposition of highly oriented Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films on diamond substrates by a simple sol-gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 μC/cm2 and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10-8 A/cm2 was found at an applied electric field of 120 kV/cm.",

keywords = "Diamond, Ferroelectric thin films, Pb(ZrTi)O, Sol-gel, Surface acoustic wave",

author = "Jianming Zeng and Lianwei Wang and Jianxia Gao and Zhitang Song and Xiangrong Zhu and Chenglu Lin and Li Hou and Erkai Liu",

year = "1999",

month = mar,

day = "1",

doi = "10.1016/S0022-0248(98)01024-0",

language = "英语",

volume = "197",

pages = "874--878",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - Structural and electrical characteristics of oriented Pb(Zr0.52Ti0.48)O3 ferroelectric thin films deposited on diamond substrates by a simple sol-gel process

AU - Zeng, Jianming

AU - Wang, Lianwei

AU - Gao, Jianxia

AU - Song, Zhitang

AU - Zhu, Xiangrong

AU - Lin, Chenglu

AU - Hou, Li

AU - Liu, Erkai

PY - 1999/3/1

Y1 - 1999/3/1

N2 - We firstly report the successful deposition of highly oriented Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films on diamond substrates by a simple sol-gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 μC/cm2 and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10-8 A/cm2 was found at an applied electric field of 120 kV/cm.

AB - We firstly report the successful deposition of highly oriented Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films on diamond substrates by a simple sol-gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 μC/cm2 and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10-8 A/cm2 was found at an applied electric field of 120 kV/cm.

KW - Diamond

KW - Ferroelectric thin films

KW - Pb(ZrTi)O

KW - Sol-gel

KW - Surface acoustic wave

UR - https://www.scopus.com/pages/publications/0033100934

U2 - 10.1016/S0022-0248(98)01024-0

DO - 10.1016/S0022-0248(98)01024-0

M3 - 文章

AN - SCOPUS:0033100934

SN - 0022-0248

VL - 197

SP - 874

EP - 878

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Structural and electrical characteristics of oriented Pb(Zr_0.52Ti_0.48)O₃ ferroelectric thin films deposited on diamond substrates by a simple sol-gel process

Abstract

Keywords

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