Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes

P. F. Liu; P. Gemeiner; H. Shen; X. J. Meng; J. H. Chu; S. Geiger; N. Guiblin; B. Dkhil

doi:10.1063/1.3212973

Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes

P. F. Liu
, P. Gemeiner
, H. Shen
, X. J. Meng
, J. H. Chu
, S. Geiger
, N. Guiblin
, B. Dkhil

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this work we studied 90 nm thick copolymer thin films of vinylidene fluoride (70%) with trifluoroethylene (30%) grown by Langmuir-Blodgett onto silicon substrates. The effects of two different bottom electrodes, namely, Al and LaNiO₃ (LNO) are investigated. A Debye-like relaxation near 320 K is enlarged by LNO bottom electrode. X-ray diffraction pattern attests that two different crystallographic structures coexist below 340 K in film deposited on LNO. Compared with Al electrode, LNO electrode strongly increases defects or gauche segments in film and further weakens properties of film.

Original language	English
Article number	054111
Journal	Journal of Applied Physics
Volume	106
Issue number	5
DOIs	https://doi.org/10.1063/1.3212973
State	Published - 2009
Externally published	Yes

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title = "Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes",

abstract = "In this work we studied 90 nm thick copolymer thin films of vinylidene fluoride (70\%) with trifluoroethylene (30\%) grown by Langmuir-Blodgett onto silicon substrates. The effects of two different bottom electrodes, namely, Al and LaNiO3 (LNO) are investigated. A Debye-like relaxation near 320 K is enlarged by LNO bottom electrode. X-ray diffraction pattern attests that two different crystallographic structures coexist below 340 K in film deposited on LNO. Compared with Al electrode, LNO electrode strongly increases defects or gauche segments in film and further weakens properties of film.",

author = "Liu, \{P. F.\} and P. Gemeiner and H. Shen and Meng, \{X. J.\} and Chu, \{J. H.\} and S. Geiger and N. Guiblin and B. Dkhil",

year = "2009",

doi = "10.1063/1.3212973",

language = "英语",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

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TY - JOUR

T1 - Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes

AU - Liu, P. F.

AU - Gemeiner, P.

AU - Shen, H.

AU - Meng, X. J.

AU - Chu, J. H.

AU - Geiger, S.

AU - Guiblin, N.

AU - Dkhil, B.

PY - 2009

Y1 - 2009

N2 - In this work we studied 90 nm thick copolymer thin films of vinylidene fluoride (70%) with trifluoroethylene (30%) grown by Langmuir-Blodgett onto silicon substrates. The effects of two different bottom electrodes, namely, Al and LaNiO3 (LNO) are investigated. A Debye-like relaxation near 320 K is enlarged by LNO bottom electrode. X-ray diffraction pattern attests that two different crystallographic structures coexist below 340 K in film deposited on LNO. Compared with Al electrode, LNO electrode strongly increases defects or gauche segments in film and further weakens properties of film.

AB - In this work we studied 90 nm thick copolymer thin films of vinylidene fluoride (70%) with trifluoroethylene (30%) grown by Langmuir-Blodgett onto silicon substrates. The effects of two different bottom electrodes, namely, Al and LaNiO3 (LNO) are investigated. A Debye-like relaxation near 320 K is enlarged by LNO bottom electrode. X-ray diffraction pattern attests that two different crystallographic structures coexist below 340 K in film deposited on LNO. Compared with Al electrode, LNO electrode strongly increases defects or gauche segments in film and further weakens properties of film.

UR - https://www.scopus.com/pages/publications/70349313489

U2 - 10.1063/1.3212973

DO - 10.1063/1.3212973

M3 - 文章

AN - SCOPUS:70349313489

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 054111

ER -

Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes

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