Strain-mediated phase control and electrolyte-gating of electron-doped manganites

Ping Hua Xiang; Shutaro Asanuma; Hiroyuki Yamada; Isao H. Inoue; Hiroshi Sato; Hiroshi Akoh; Akihito Sawa; Kazunori Ueno; Hongtao Yuan; Hidekazu Shimotani; Masashi Kawasaki; Yoshihiro Iwasa

doi:10.1002/adma.201102968

Strain-mediated phase control and electrolyte-gating of electron-doped manganites

Ping Hua Xiang, Shutaro Asanuma, Hiroyuki Yamada, Isao H. Inoue, Hiroshi Sato, Hiroshi Akoh, Akihito Sawa, Kazunori Ueno, Hongtao Yuan, Hidekazu Shimotani, Masashi Kawasaki, Yoshihiro Iwasa

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

A prototype Mott transistor, the electric double layer transistor with a strained CaMnO ₃ thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO ₃ exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.

Original language	English
Pages (from-to)	5822-5827
Number of pages	6
Journal	Advanced Materials
Volume	23
Issue number	48
DOIs	https://doi.org/10.1002/adma.201102968
State	Published - 22 Dec 2011
Externally published	Yes

Keywords

correlated electron oxides
field-effect transistors
metal-insulator transition
phase diagram

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10.1002/adma.201102968

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title = "Strain-mediated phase control and electrolyte-gating of electron-doped manganites",

abstract = "A prototype Mott transistor, the electric double layer transistor with a strained CaMnO 3 thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO 3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.",

keywords = "correlated electron oxides, field-effect transistors, metal-insulator transition, phase diagram",

author = "Xiang, \{Ping Hua\} and Shutaro Asanuma and Hiroyuki Yamada and Inoue, \{Isao H.\} and Hiroshi Sato and Hiroshi Akoh and Akihito Sawa and Kazunori Ueno and Hongtao Yuan and Hidekazu Shimotani and Masashi Kawasaki and Yoshihiro Iwasa",

year = "2011",

month = dec,

day = "22",

doi = "10.1002/adma.201102968",

language = "英语",

volume = "23",

pages = "5822--5827",

journal = "Advanced Materials",

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publisher = "Wiley-Blackwell",

number = "48",

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TY - JOUR

T1 - Strain-mediated phase control and electrolyte-gating of electron-doped manganites

AU - Xiang, Ping Hua

AU - Asanuma, Shutaro

AU - Yamada, Hiroyuki

AU - Inoue, Isao H.

AU - Sato, Hiroshi

AU - Akoh, Hiroshi

AU - Sawa, Akihito

AU - Ueno, Kazunori

AU - Yuan, Hongtao

AU - Shimotani, Hidekazu

AU - Kawasaki, Masashi

AU - Iwasa, Yoshihiro

PY - 2011/12/22

Y1 - 2011/12/22

N2 - A prototype Mott transistor, the electric double layer transistor with a strained CaMnO 3 thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO 3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.

AB - A prototype Mott transistor, the electric double layer transistor with a strained CaMnO 3 thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO 3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.

KW - correlated electron oxides

KW - field-effect transistors

KW - metal-insulator transition

KW - phase diagram

UR - https://www.scopus.com/pages/publications/83755172684

U2 - 10.1002/adma.201102968

DO - 10.1002/adma.201102968

M3 - 文章

C2 - 22105844

AN - SCOPUS:83755172684

SN - 0935-9648

VL - 23

SP - 5822

EP - 5827

JO - Advanced Materials

JF - Advanced Materials

IS - 48

ER -

Strain-mediated phase control and electrolyte-gating of electron-doped manganites

Abstract

Keywords

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